Datasheet AUIRL7732S2TR, AUIRL7732S2TR1 (International Rectifier) - 5
| Fabricante | International Rectifier |
| Descripción | Automotive Grade. DirectFET Power MOSFET |
| Páginas / Página | 11 / 5 — Fig 7. Fig 8. Fig 9. Fig 10. Fig.11. Fig 12 |
| Formato / tamaño de archivo | PDF / 221 Kb |
| Idioma del documento | Inglés |
Fig 7. Fig 8. Fig 9. Fig 10. Fig.11. Fig 12
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AUIRL7732S2TR/TR1 3.0 1000 ) V( e 2.5 ) g A( a t t l n o e V r r 100 dl u 2.0 o C h n s i TJ = -40°C e a r r TJ = 25°C ht D I T e e J = 175°C t 1.5 D = 50μA s a I re G D = 250μA v 10 , e ) I h D = 1.0mA R t ( , S 1.0 ID = 1.0A D G I S V VGS = 0V 0.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 TJ , Temperature ( °C ) VSD, Source-to-Drain Voltage (V)
Fig 7.
Typical Threshold Voltage vs. Junction Temperature
Fig 8.
Typical Source-Drain Diode Forward Voltage 100 100000 VGS = 0V, f = 1 MHZ ) TJ = 25°C Ciss = Cgs + Cgd, C ds SHORTED S( Crss = Cgd e 80 c C n oss = Cds + Cgd at ) c F u p 10000 d ( n 60 e o c c T n s J = 175°C a n ti a C r ca iss T 40 p d a ra C , 1000 Coss wr C o F C rss , 20 sf VDS = 5.0V G 380μs PULSE WIDTH 0 100 0 20 40 60 80 100 1 10 100 ID,Drain-to-Source Current (A) VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Forward Transconductance vs. Drain Current
Fig 10.
Typical Capacitance vs. Drain-to-Source Voltage 14.0 60 ID= 35A ) 12.0 V 50 ( V e DS= 32V ga 10.0 V ) tl DS= 20V A( o V 40 t V DS= 8.0V n e e c 8.0 rr r u uo C 30 S n - i 6.0 o a t r -e D ta , 20 G 4.0 I D , SGV 10 2.0 0.0 0 0 10 20 30 40 50 60 25 50 75 100 125 150 175 Q T G, Total Gate Charge (nC) C , Case Temperature (°C)
Fig.11
Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12.
Maximum Drain Current vs. Case Temperature www.irf.com 5
Fig 7.
Typical Threshold Voltage vs. Junction Temperature
Fig 8.
Typical Source-Drain Diode Forward Voltage 100 100000 VGS = 0V, f = 1 MHZ ) TJ = 25°C Ciss = Cgs + Cgd, C ds SHORTED S( Crss = Cgd e 80 c C n oss = Cds + Cgd at ) c F u p 10000 d ( n 60 e o c c T n s J = 175°C a n ti a C r ca iss T 40 p d a ra C , 1000 Coss wr C o F C rss , 20 sf VDS = 5.0V G 380μs PULSE WIDTH 0 100 0 20 40 60 80 100 1 10 100 ID,Drain-to-Source Current (A) VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Forward Transconductance vs. Drain Current
Fig 10.
Typical Capacitance vs. Drain-to-Source Voltage 14.0 60 ID= 35A ) 12.0 V 50 ( V e DS= 32V ga 10.0 V ) tl DS= 20V A( o V 40 t V DS= 8.0V n e e c 8.0 rr r u uo C 30 S n - i 6.0 o a t r -e D ta , 20 G 4.0 I D , SGV 10 2.0 0.0 0 0 10 20 30 40 50 60 25 50 75 100 125 150 175 Q T G, Total Gate Charge (nC) C , Case Temperature (°C)
Fig.11
Typical Gate Charge vs.Gate-to-Source Voltage
Fig 12.
Maximum Drain Current vs. Case Temperature www.irf.com 5