Datasheet AUIRL7732S2TR, AUIRL7732S2TR1 (International Rectifier)

PD - 97635A
AUTOMOTIVE GRADE
AUIRL7732S2TR AUIRL7732S2TR1 DirectFET
®
Power MOSFET ‚ • Logic Level
V
• Advanced Process Technology
(BR)DSS 40V
• Optimized for Automotive DC-DC, Motor Drive and
RDS(on) typ. 5.0m
Ω other Heavy Load Applications
max. 6.6m
• Exceptionally Small Footprint and Low Profile Ω • High Power Density
ID (Silicon Limited) 58A
• Low Parasitic Parameters
Q
• Dual Sided Cooling
g 22nC
• 175°C Operating Temperature • Repetitive Avalanche Capability for Robustness and Reliability S • Lead free, RoHS and Halogen free D G D S DirectFET
™
ISOMETRIC
SC
Applicable DirectFET Outline and Substrate Outline 
SB SC M2 M4 L4 L6 L8 Description
The AUIRL7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra- red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRL7732S2 to offer substantial system level savings and performance improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7732S2 can be utilized together with the AUIRL7736M2 as a control/sync MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter Max. Units
VDS Drain-to-Source Voltage 40 V VGS Gate-to-Source Voltage ± 16 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f 58 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)f 41 A ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)e 14 IDM Pulsed Drain Current i 230 PD @TC = 25°C Power Dissipation f 41 W PD @TA = 25°C Power Dissipation e 2.2 EAS Single Pulse Avalanche Energy (Thermally Limited) h 46 E mJ AS (tested) Single Pulse Avalanche Energy Tested Value h 124 IAR Avalanche Currentg See Fig. 18a,18b,16,17 A EAR Repetitive Avalanche Energy g mJ TP Peak Soldering Temperature 260 TJ Operating Junction and -55 to + 175 °C TSTG Storage Temperature Range
Thermal Resistance Parameter Typ. Max. Units
RθJA Junction-to-Ambient e ––– 67 RθJA Junction-to-Ambient j 12.5 ––– RθJA Junction-to-Ambient k 20 ––– °C/W RθJCan Junction-to-Can fl ––– 3.7 RθJ-PCB Junction-to-PCB Mounted 1.0 ––– Linear Derating Factor f 0.27 W/°C HEXFET® is a registered trademark of International Rectifier. www.irf.com 1 04/07/11