Datasheet AUIRL7732S2TR, AUIRL7732S2TR1 (International Rectifier) - 6

FabricanteInternational Rectifier
DescripciónAutomotive Grade. DirectFET Power MOSFET
Páginas / Página11 / 6 — Fig 13. Fig 14. Fig 15. Fig 16
Formato / tamaño de archivoPDF / 221 Kb
Idioma del documentoInglés

Fig 13. Fig 14. Fig 15. Fig 16

Fig 13 Fig 14 Fig 15 Fig 16

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AUIRL7732S2TR/TR1 1000 200 OPERATION IN THIS AREA )J ID LIMITED BY R m 180 DS(on) ( ) y TOP 6.8A A g ( r 160 18A t e n n e E BOTTOM 35A r r 140 100 100μsec e u 1msec h C c n 120 ec al r a u v o 100 A S 10msec - e ot sl 80 - u ni 10 P a r DC el 60 D g , niS 40 I D Tc = 25°C , Tj = 175°C S A 20 Single Pulse E 1 0 0 1 10 100 25 50 75 100 125 150 175 VDS, Drain-to-Source Voltage (V) Starting TJ , Junction Temperature (°C)
Fig 13.
Maximum Safe Operating Area
Fig 14.
Maximum Avalanche Energy vs. Temperature 10 W/ C D = 0.50 ° ) 1 0.20 CJht 0.10 Z ( 0.05 Ri (°C/W) e τi (sec) R R R R s 0.1 0.02 R 1 R 2 R 3 R 4 n 1 2 3 4 1.60955 0.006147 o τJ τ p 0.01 τ C J τ s 1.36375 0.029323 τ e 1 τ τ2 τ3 τ4 R 1 τ2 τ τ 3 4 0.12482 2.09e-05 la Ci= τi/Ri 0.60108 0.000679 m 0.01 Ci i/Ri reh SINGLE PULSE Notes: T ( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec)
Fig 15.
Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse Al owed avalanche Current vs avalanche pulsewidth, tav, assuming 100 ΔTj = 150°C and ) A Tstart =25°C (Single Pulse) ( tnerruC 0.01 10 ehcn 0.05 ala 0.10 v A 1 Al owed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec)
Fig 16.
Typical Avalanche Current vs.Pulsewidth 6 www.irf.com