Datasheet EPC2215 (Efficient Power Conversion) - 3

eGaN® FET DATASHEET
EPC2215
Figure 5a: Capacitance (Linear Scale) Figure 5b: Capacitance (Log Scale)
1600 10000 1400 1200 1000 1000 COSS = CGD + CSD 800 CISS = CGD + CGS 100 COSS = CGD + CSD CRSS = CGD CISS = CGD + CGS
Capacitance (pF)
600
Capacitance (pF)
CRSS = CGD 400 10 200 0 1 0 50 100 150 200 0 50 100 150 200
VDS V – Drain-to-Source Voltage (V) DS – Drain-to-Source Voltage (V) Figure 6: Output Charge and C Figure 7: Gate Charge OSS Stored Energy
120 8.0 5 I 96 6.4 D = 20 A
)
4 V
µJ
DS = 100 V 72 4.8 3
Output Charge (nC) Stored Energy (
48 3.2 2
– C OSS – Gate-to-Source Voltage (V) Q OSS – E OSS
24 1.6
V GS
1 0 0.0 0 0 50 100 150 200 0 2 4 6 8 10 12 14
VDS – Drain-to-Source Voltage (V) QG – Gate Charge (nC) Figure 8: Reverse Drain-Source Characteristics Figure 9: Normalized On-State Resistance vs. Temperature
160 2.0 140 25˚C ID = 20 A 125˚C
DS(on)
1.8 VGS = 5 V 120 VGS = 0 V 1.6 100 80 1.4 60 1.2
– Source-to-Drain Current (A) I SD
40
Normalized On-State Resistance R
20 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.8 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C)
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