Datasheet EPC2215 (Efficient Power Conversion) - 2

eGaN® FET DATASHEET
EPC2215
Dynamic Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CISS Input Capacitance# 1356 1790 CRSS Reverse Transfer Capacitance VDS = 100 V, VGS = 0 V 2.0 COSS Output Capacitance# 390 585 pF COSS(ER) Effective Output Capacitance, Energy Related (Note 2) 556 VDS = 0 to 100 V, VGS = 0 V COSS(TR) Effective Output Capacitance, Time Related (Note 3) 699 RG Gate Resistance 0.4 Ω QG Total Gate Charge# VDS = 100 V, VGS = 5 V, ID = 20 A 13.6 17.7 QGS Gate-to-Source Charge 3.3 QGD Gate-to-Drain Charge VDS = 100 V, ID = 20 A 2.1 nC QG(TH) Gate Charge at Threshold 2.4 QOSS Output Charge# VDS = 100 V, VGS = 0 V 69 104 QRR Source-Drain Recovery Charge 0 # Defined by design. Not subject to production test. Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS. Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
Figure 1: Typical Output Characteristics at 25°C Figure 2: Transfer Characteristics
160 160 V 140 GS = 5 V 140 V 25˚C GS = 4 V V 125˚C 120 GS = 3 V 120 VGS = 2 V VDS = 3 V DS = 6 V 100 100 80 80
– Drain Current (A)
60
– Drain Current (A)
60
I D I D
40 40 20 20 0 0 0 1 2 3 4 5 6 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS V – Drain-to-Source Voltage (V) GS – Gate-to-Source Voltage (V) Figure 3: RDS(on) vs. VGS for Various Drain Currents Figure 4: RDS(on) vs. VGS for Various Temperatures ) Ω
20 ID = 10 A 20 25˚C ID = 20 A 125˚C ID = 30 A
ance (m
I VIDS D = 3 V = 20 A 15 D = 40 A 15
ce Resist ur So
10
to-
10
– Drain-to-Source Resistance (mΩ) – Drain-
5 5
R DS(on) R DS(on)
0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
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