Datasheet IRFZ46N (International Rectifier) - 6
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET, VDSS = 55 V, RDS(on) = 16.5 mΩ, ID = 30 A, TO-220AB |
| Páginas / Página | 9 / 6 — Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b |
| Formato / tamaño de archivo | PDF / 116 Kb |
| Idioma del documento | Inglés |
Fig 12a. Fig 12c. Fig 12b. Fig 13a. Fig 13b
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IRFZ46N 350 J) 15V m ID ( TOP 11A gy 300 20A BOTTOM 28A L DRIVER ner VDS 250 R G D.U.T + 200 V - DD alanche E IAS A v 20V e A 150 t 0.01Ω p ls u
Fig 12a.
Unclamped Inductive Test Circuit 100 ingle P V(BR)DSS 50 tp , S E AS 0 25 50 75 100 125 150 175 Starting T , Junction Temperature( C ° ) J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + VGS V D.U.T. DS - QGS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com
Fig 12a.
Unclamped Inductive Test Circuit 100 ingle P V(BR)DSS 50 tp , S E AS 0 25 50 75 100 125 150 175 Starting T , Junction Temperature( C ° ) J
Fig 12c.
Maximum Avalanche Energy Vs. Drain Current IAS
Fig 12b.
Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V QG .3µF + VGS V D.U.T. DS - QGS QGD VGS VG 3mA I I G D Charge Current Sampling Resistors
Fig 13a.
Basic Gate Charge Waveform
Fig 13b.
Gate Charge Test Circuit 6 www.irf.com