Datasheet IRFZ46N (International Rectifier)
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET, VDSS = 55 V, RDS(on) = 16.5 mΩ, ID = 30 A, TO-220AB |
| Páginas / Página | 9 / 1 — Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal … |
| Formato / tamaño de archivo | PDF / 116 Kb |
| Idioma del documento | Inglés |
Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
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PD-91277A IRFZ46N HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 55V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 16.5mΩ l Fast Switching G l Fully Avalanche Rated ID = 53A S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A IDM Pulsed Drain Current 180 PD @TC = 25°C Power Dissipation 107 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 28 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.4 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 www.irf.com 1 07/15/02
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry.
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A IDM Pulsed Drain Current 180 PD @TC = 25°C Power Dissipation 107 W Linear Derating Factor 0.71 W/°C VGS Gate-to-Source Voltage ± 20 V IAR Avalanche Current 28 A EAR Repetitive Avalanche Energy 11 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 175 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.4 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 www.irf.com 1 07/15/02