Datasheet IRFZ46N (International Rectifier) - 5
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET, VDSS = 55 V, RDS(on) = 16.5 mΩ, ID = 30 A, TO-220AB |
| Páginas / Página | 9 / 5 — Fig 10a. Fig 9. Fig 10b. Fig 11 |
| Formato / tamaño de archivo | PDF / 116 Kb |
| Idioma del documento | Inglés |
Fig 10a. Fig 9. Fig 10b. Fig 11
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IRFZ46N 60 RD LIMITED BY PACKAGE VDS 50 VGS D.U.T. RG + 40 -VDD VGS 30 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 I , Drain Current (A) D
Fig 10a.
Switching Time Test Circuit 10 VDS 90% 025 50 75 100 125 150 175 T , Case Temperature ( C ° ) C 10% V
Fig 9.
Maximum Drain Current Vs. GS t Case Temperature d(on) tr td(off) tf
Fig 10b.
Switching Time Waveforms 10 thJC (Z ) 1 e D = 0.50 pons s 0.20 e R 0.10 PDM 0.05 0.1 t1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) t2 Thermal Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5
Fig 10a.
Switching Time Test Circuit 10 VDS 90% 025 50 75 100 125 150 175 T , Case Temperature ( C ° ) C 10% V
Fig 9.
Maximum Drain Current Vs. GS t Case Temperature d(on) tr td(off) tf
Fig 10b.
Switching Time Waveforms 10 thJC (Z ) 1 e D = 0.50 pons s 0.20 e R 0.10 PDM 0.05 0.1 t1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) t2 Thermal Notes: 1. Duty factor D = t / t 1 2 2. Peak T = P x Z + T J DM thJC C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5