Datasheet IRFZ46N (International Rectifier) - 2
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET, VDSS = 55 V, RDS(on) = 16.5 mΩ, ID = 30 A, TO-220AB |
| Páginas / Página | 9 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| Formato / tamaño de archivo | PDF / 116 Kb |
| Idioma del documento | Inglés |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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IRFZ46N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 16.5 mΩ VGS = 10V, ID = 28A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 19 ––– ––– S VDS = 25V, ID = 28A ––– ––– 25 V IDSS Drain-to-Source Leakage Current µA DS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 72 ID = 28A Qgs Gate-to-Source Charge ––– ––– 11 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 26 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V tr Rise Time ––– 76 ––– ID = 28A ns td(off) Turn-Off Delay Time ––– 52 ––– RG = 12Ω tf Fall Time ––– 57 ––– VGS = 10V, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 1696 ––– VGS = 0V Coss Output Capacitance ––– 407 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 583 152 mJ IAS = 28A, L = 389µH
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 53 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 180 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V trr Reverse Recovery Time ––– 67 101 ns TJ = 25°C, IF = 28A Qrr Reverse Recovery Charge ––– 208 312 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ). This is a typical value at device destruction and represents Starting TJ = 25°C, L = 389µH operation outside rated limits. RG = 25Ω, IAS = 28A. (See Figure 12). This is a calculated value limited to TJ = 175°C. I ≤ SD 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, Calculated continuous current based on maximum allowable TJ ≤ 175°C. junction temperature. Package limitation current is 39A. 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 16.5 mΩ VGS = 10V, ID = 28A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 19 ––– ––– S VDS = 25V, ID = 28A ––– ––– 25 V IDSS Drain-to-Source Leakage Current µA DS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V IGSS nA Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V Qg Total Gate Charge ––– ––– 72 ID = 28A Qgs Gate-to-Source Charge ––– ––– 11 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 26 VGS = 10V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V tr Rise Time ––– 76 ––– ID = 28A ns td(off) Turn-Off Delay Time ––– 52 ––– RG = 12Ω tf Fall Time ––– 57 ––– VGS = 10V, See Fig. 10 Between lead, D LD Internal Drain Inductance ––– 4.5 ––– 6mm (0.25in.) nH from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 1696 ––– VGS = 0V Coss Output Capacitance ––– 407 ––– VDS = 25V Crss Reverse Transfer Capacitance ––– 110 ––– pF ƒ = 1.0MHz, See Fig. 5 EAS Single Pulse Avalanche Energy ––– 583 152 mJ IAS = 28A, L = 389µH
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– 53 (Body Diode) showing the A G ISM Pulsed Source Current integral reverse 180 (Body Diode) S ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V trr Reverse Recovery Time ––– 67 101 ns TJ = 25°C, IF = 28A Qrr Reverse Recovery Charge ––– 208 312 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ). This is a typical value at device destruction and represents Starting TJ = 25°C, L = 389µH operation outside rated limits. RG = 25Ω, IAS = 28A. (See Figure 12). This is a calculated value limited to TJ = 175°C. I ≤ SD 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, Calculated continuous current based on maximum allowable TJ ≤ 175°C. junction temperature. Package limitation current is 39A. 2 www.irf.com