Datasheet IRLR024NPbF, IRLU024NPbF (Infineon) - 2
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 11 / 2 — Electrical Characteristics @ TJ = 25°C (unless otherwise specified). … |
| Formato / tamaño de archivo | PDF / 316 Kb |
| Idioma del documento | Inglés |
Electrical Characteristics @ TJ = 25°C (unless otherwise specified). Parameter. Min. Typ. Max. Units. Conditions
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IRLR/U024NPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.065 VGS = 10V, ID = 10A RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.080 Ω VGS = 5.0V, ID = 10A ––– ––– 0.110 VGS = 4.0V, ID = 9.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 8.3 ––– ––– S VDS = 25V, ID = 11A ––– ––– 25 V IDSS Drain-to-Source Leakage Current µA DS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 V IGSS nA GS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 15 ID = 11A Qgs Gate-to-Source Charge ––– ––– 3.7 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 8.5 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 7.1 ––– VDD = 28V tr Rise Time ––– 74 ––– I ns D = 11A td(off) Turn-Off Delay Time ––– 20 ––– RG = 12Ω, VGS = 5.0V tf Fall Time ––– 29 ––– RD = 2.4Ω, See Fig. 10 Between lead, D LD Internal Drain Inductance 4.5 nH 6mm (0.25in.) from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 480 ––– VGS = 0V Coss Output Capacitance ––– 130 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– (Body Diode) 17 showing the A G ISM Pulsed Source Current integral reverse ––– ––– 72 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V trr Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 11A Qrr Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. (See fig. 11) VDD = 25V, starting TJ = 25°C, L = 790µH This is applied for I-PAK, LS of D-PAK is measured between RG = 25Ω, IAS = 11A. (See Figure 12) lead and center of die contact ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, Uses IRLZ24N data and test conditions. TJ ≤ 175°C 2 www.irf.com
Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.061 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.065 VGS = 10V, ID = 10A RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.080 Ω VGS = 5.0V, ID = 10A ––– ––– 0.110 VGS = 4.0V, ID = 9.0A VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 8.3 ––– ––– S VDS = 25V, ID = 11A ––– ––– 25 V IDSS Drain-to-Source Leakage Current µA DS = 55V, VGS = 0V ––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 V IGSS nA GS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V Qg Total Gate Charge ––– ––– 15 ID = 11A Qgs Gate-to-Source Charge ––– ––– 3.7 nC VDS = 44V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 8.5 VGS = 5.0V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 7.1 ––– VDD = 28V tr Rise Time ––– 74 ––– I ns D = 11A td(off) Turn-Off Delay Time ––– 20 ––– RG = 12Ω, VGS = 5.0V tf Fall Time ––– 29 ––– RD = 2.4Ω, See Fig. 10 Between lead, D LD Internal Drain Inductance 4.5 nH 6mm (0.25in.) from package G LS Internal Source Inductance ––– 7.5 ––– and center of die contact S Ciss Input Capacitance ––– 480 ––– VGS = 0V Coss Output Capacitance ––– 130 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 61 ––– ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions
D IS Continuous Source Current MOSFET symbol ––– ––– (Body Diode) 17 showing the A G ISM Pulsed Source Current integral reverse ––– ––– 72 (Body Diode) p-n junction diode. S VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 11A, VGS = 0V trr Reverse Recovery Time ––– 60 90 ns TJ = 25°C, IF = 11A Qrr Reverse RecoveryCharge ––– 130 200 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. (See fig. 11) VDD = 25V, starting TJ = 25°C, L = 790µH This is applied for I-PAK, LS of D-PAK is measured between RG = 25Ω, IAS = 11A. (See Figure 12) lead and center of die contact ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, Uses IRLZ24N data and test conditions. TJ ≤ 175°C 2 www.irf.com