Datasheet IRLR024NPbF, IRLU024NPbF (Infineon) - 4
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 11 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 316 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
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IRLR/U024NPbF 800 V = 0V, f = 1MHz 15 GS I = D 11A C = C + C , C SHORTED iss gs gd ds V = 44V C = C ) DS rss gd V = 28V C = C + C DS oss ds gd C 12 600 iss ge (V pF) olta 9 400 citance ( C ource V oss pa -S -to 6 , Ca C ate 200 Crss , G GS 3 V FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 A 1 10 100 0 4 8 12 16 20 DS V , Drain-to-Source Voltage (V) Q , Total Gate Charge (nC) G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED ) A BY RDS(on) urrent ( A ( 100 T = 17 J 5°C rain C T J = 25°C urrent 10µs 10 e D C n rai evers D 10 100µs I , D I , R SD T = 25°C 1ms C T = 175°C J V = GS 0V Single Pulse 10ms 1 A 1 A 0.4 0.8 1.2 1.6 2.0 1 10 100 V , Source-to-Drain Voltage (V) V , Drain-to-Source Voltage (V) SD DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED ) A BY RDS(on) urrent ( A ( 100 T = 17 J 5°C rain C T J = 25°C urrent 10µs 10 e D C n rai evers D 10 100µs I , D I , R SD T = 25°C 1ms C T = 175°C J V = GS 0V Single Pulse 10ms 1 A 1 A 0.4 0.8 1.2 1.6 2.0 1 10 100 V , Source-to-Drain Voltage (V) V , Drain-to-Source Voltage (V) SD DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com