Datasheet IRLB8721PbF (Infineon) - 7
| Fabricante | Infineon |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 9 / 7 — D.U.T. Fig 15. Fig 16a. Fig 16b |
| Formato / tamaño de archivo | PDF / 274 Kb |
| Idioma del documento | Inglés |
D.U.T. Fig 15. Fig 16a. Fig 16b
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IRLB8721PbF Driver Gate Drive P.W.
D.U.T
Period D = P.W. Period + V * Circuit Layout Considerations GS=10V • Low Stray Inductance • Ground Plane - • Low Leakage Inductance D.U.T. I Current Transformer SD Waveform + Reverse Recovery Body Diode Forward Current Current - + - di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD • dv/dt controlled by R V G DD Re-Applied RG + Voltage • Driver same type as D.U.T. Body Diode Forward Drop • ISD controlled by Duty Factor "D" - Inductor Curent • D.U.T. - Device Under Test Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 15.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds 50KΩ Vgs .2μF 12V .3μF +V D.U.T. DS - Vgs(th) VGS 3mA I I Qgodr Qgd Qgs2 Qgs1 G D Current Sampling Resistors
Fig 16a.
Gate Charge Test Circuit
Fig 16b.
Gate Charge Waveform www.irf.com 7
D.U.T
Period D = P.W. Period + V * Circuit Layout Considerations GS=10V • Low Stray Inductance • Ground Plane - • Low Leakage Inductance D.U.T. I Current Transformer SD Waveform + Reverse Recovery Body Diode Forward Current Current - + - di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD • dv/dt controlled by R V G DD Re-Applied RG + Voltage • Driver same type as D.U.T. Body Diode Forward Drop • ISD controlled by Duty Factor "D" - Inductor Curent • D.U.T. - Device Under Test Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices
Fig 15.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Current Regulator Same Type as D.U.T. Id Vds 50KΩ Vgs .2μF 12V .3μF +V D.U.T. DS - Vgs(th) VGS 3mA I I Qgodr Qgd Qgs2 Qgs1 G D Current Sampling Resistors
Fig 16a.
Gate Charge Test Circuit
Fig 16b.
Gate Charge Waveform www.irf.com 7