Datasheet BC817DPN (Nexperia) - 3
| Fabricante | Nexperia |
| Descripción | NPN/PNP general purpose transistor |
| Páginas / Página | 9 / 3 — Nexperia. BC817DPN. NPN/PNP general purpose transistor. 10. … |
| Revisión | 27112019 |
| Formato / tamaño de archivo | PDF / 223 Kb |
| Idioma del documento | Inglés |
Nexperia. BC817DPN. NPN/PNP general purpose transistor. 10. Characteristics Table 7. Characteristics. Symbol. Parameter. Conditions
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Nexperia BC817DPN NPN/PNP general purpose transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor unless otherwise specified; for the PNP transistor with negative polarity
ICBO col ector-base cut-of VCB = 20 V; IE = 0 A; Tamb = 25 °C - - 100 nA current VCB = 20 V; IE = 0 A; Tj = 150 °C - - 5 µA IEBO emitter-base cut-of VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA current hFE DC current gain VCE = 1 V; IC = 100 mA [1] 160 - 400 VCE = 1 V; IC = 500 mA; Tamb = 25 °C [1] 40 - - VCEsat collector-emitter IC = 500 mA; IB = 50 mA; Tamb = 25 °C [1] - - 700 mV saturation voltage VBE base-emitter voltage VCE = 1 V; IC = 500 mA [1] [2] - - 1.2 V
NPN transistor
Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; - 5 - pF Tamb = 25 °C fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; 100 - - MHz Tamb = 25 °C
PNP transistor
Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; - 9 - pF f = 1 MHz; Tamb = 25 °C fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; 80 - - MHz Tamb = 25 °C [1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02 [2] VBE decreases by approximately -2 mV/k with increasing temperature. mbl747 mbl748 500 1000 I IB (mA) = 15 h C 13.5 FE (mA) 12.0 10.5 400 (1) 800 9.0 7.5 6.0 4.5 300 600 (2) 3.0 200 400 1.5 (3) 100 200 0 0 10- 1 1 10 102 103 0 2 4 6 8 10 IC (mA) VCE (V) VCE = 1 V Tamb = 25 °C (1) Tamb = 150 °C (2) T
Fig. 2. TR1 (NPN): Collector current as a function of
amb = 25 °C (3) T
collector-emitter voltage; typical values
amb = −55 °C
Fig. 1. TR1 (NPN): DC current gain as a function of collector current; typical values
BC817DPN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 3 / 9
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents
Nexperia BC817DPN NPN/PNP general purpose transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor unless otherwise specified; for the PNP transistor with negative polarity
ICBO col ector-base cut-of VCB = 20 V; IE = 0 A; Tamb = 25 °C - - 100 nA current VCB = 20 V; IE = 0 A; Tj = 150 °C - - 5 µA IEBO emitter-base cut-of VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA current hFE DC current gain VCE = 1 V; IC = 100 mA [1] 160 - 400 VCE = 1 V; IC = 500 mA; Tamb = 25 °C [1] 40 - - VCEsat collector-emitter IC = 500 mA; IB = 50 mA; Tamb = 25 °C [1] - - 700 mV saturation voltage VBE base-emitter voltage VCE = 1 V; IC = 500 mA [1] [2] - - 1.2 V
NPN transistor
Cc collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; - 5 - pF Tamb = 25 °C fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; 100 - - MHz Tamb = 25 °C
PNP transistor
Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; - 9 - pF f = 1 MHz; Tamb = 25 °C fT transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; 80 - - MHz Tamb = 25 °C [1] Pulsed test: tp ≤ 300 μs; δ ≤ 0.02 [2] VBE decreases by approximately -2 mV/k with increasing temperature. mbl747 mbl748 500 1000 I IB (mA) = 15 h C 13.5 FE (mA) 12.0 10.5 400 (1) 800 9.0 7.5 6.0 4.5 300 600 (2) 3.0 200 400 1.5 (3) 100 200 0 0 10- 1 1 10 102 103 0 2 4 6 8 10 IC (mA) VCE (V) VCE = 1 V Tamb = 25 °C (1) Tamb = 150 °C (2) T
Fig. 2. TR1 (NPN): Collector current as a function of
amb = 25 °C (3) T
collector-emitter voltage; typical values
amb = −55 °C
Fig. 1. TR1 (NPN): DC current gain as a function of collector current; typical values
BC817DPN All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2019. Al rights reserved
Product data sheet 27 November 2019 3 / 9
Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information Contents