Datasheet SQJ457EP (Vishay) - 4
| Fabricante | Vishay |
| Descripción | Automotive P-Channel 60 V (D-S) 175 °C MOSFET |
| Páginas / Página | 10 / 4 — SQJ457EP. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction … |
| Formato / tamaño de archivo | PDF / 212 Kb |
| Idioma del documento | Inglés |
SQJ457EP. TYPICAL CHARACTERISTICS. On-Resistance vs. Junction Temperature. Source Drain Diode Forward Voltage
Línea de modelo para esta hoja de datos
Versión de texto del documento
SQJ457EP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.5 10000 100 10000 d) e I = 10 A D liz a 2.1 10 V = 10 V ) GS (A T = 150 °C J 1000 1000 1.7 1 rrent ne ne u ne ine ne ine V = 4.5 V GS 1st li T = 25 °C J 1st li 2nd l 1.3 2nd li 2nd l 0.1 2nd li Resistance (Norm 100 ource C 100 n- S - O - 0.9 I S 0.01 (on) S DR 0.5 10 0.001 10 -50 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 T - Junction Temperature (°C) V - Source-to-Drain Voltage (V) J SD 2nd line 2nd line
On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage
Axis Title Axis Title 0.10 10000 1.0 10000 I = 250 μA D ) 0.08 Ω 0.7 ) 1000 1000 0.06 0.4 ne ne I = 5 mA ne ine D ne ine ance (V ri Resistance ( T = 150 °C a J 1st li V 2nd l n- 1st li 0.04 2nd li 2nd li 2nd l ) O 0.1 - 100 (th 100 GS (on) V S D 0.02 -0.2 R T = 25 °C J 0.00 10 -0.5 10 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 175 V - Gate-to-Source Voltage (V) T - Temperature (°C) GS J 2nd line 2nd line
On-Resistance vs. Gate-to-Source Voltage Threshold Voltage
Axis Title -60 10000 ) I = 1 mA (V D -63 ltage o 1000 -66 ne ne ine ource V 1st li 2nd l -69 2nd li -to-S n 100 rai D - -72 DSV -75 10 -50 -25 0 25 50 75 100 125 150 175 T - Junction Temperature (°C) J 2nd line
Drain-Source Breakdown vs. Junction Temperature
S16-1123-Rev. A, 13-Jun-16
4
Document Number: 76628 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.5 10000 100 10000 d) e I = 10 A D liz a 2.1 10 V = 10 V ) GS (A T = 150 °C J 1000 1000 1.7 1 rrent ne ne u ne ine ne ine V = 4.5 V GS 1st li T = 25 °C J 1st li 2nd l 1.3 2nd li 2nd l 0.1 2nd li Resistance (Norm 100 ource C 100 n- S - O - 0.9 I S 0.01 (on) S DR 0.5 10 0.001 10 -50 -25 0 25 50 75 100 125 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 T - Junction Temperature (°C) V - Source-to-Drain Voltage (V) J SD 2nd line 2nd line
On-Resistance vs. Junction Temperature Source Drain Diode Forward Voltage
Axis Title Axis Title 0.10 10000 1.0 10000 I = 250 μA D ) 0.08 Ω 0.7 ) 1000 1000 0.06 0.4 ne ne I = 5 mA ne ine D ne ine ance (V ri Resistance ( T = 150 °C a J 1st li V 2nd l n- 1st li 0.04 2nd li 2nd li 2nd l ) O 0.1 - 100 (th 100 GS (on) V S D 0.02 -0.2 R T = 25 °C J 0.00 10 -0.5 10 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 175 V - Gate-to-Source Voltage (V) T - Temperature (°C) GS J 2nd line 2nd line
On-Resistance vs. Gate-to-Source Voltage Threshold Voltage
Axis Title -60 10000 ) I = 1 mA (V D -63 ltage o 1000 -66 ne ne ine ource V 1st li 2nd l -69 2nd li -to-S n 100 rai D - -72 DSV -75 10 -50 -25 0 25 50 75 100 125 150 175 T - Junction Temperature (°C) J 2nd line
Drain-Source Breakdown vs. Junction Temperature
S16-1123-Rev. A, 13-Jun-16
4
Document Number: 76628 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000