Datasheet SQJ457EP (Vishay) - 3
| Fabricante | Vishay |
| Descripción | Automotive P-Channel 60 V (D-S) 175 °C MOSFET |
| Páginas / Página | 10 / 3 — SQJ457EP. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer … |
| Formato / tamaño de archivo | PDF / 212 Kb |
| Idioma del documento | Inglés |
SQJ457EP. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer Characteristics. Transconductance
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SQJ457EP
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 80 10000 V = 10 V thru 5 V GS 80 64 ) 1000 1000 60 48 rrent (A ne ne rrent (A ine u ne ne ine u C C n V = 4 V GS 1st li n T = 25 °C C 2nd l 1st li 40 2nd li 2nd li 2nd l rai 32 rai D 100 D 100 - - I D I D 20 16 V = 3 V T = 125 °C GS C T = -55 °C C 0 10 0 10 0 2 4 6 8 10 0 2 4 6 8 10 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS 2nd line 2nd line
Output Characteristics Transfer Characteristics
Axis Title Axis Title 50 10000 0.10 10000 T = -55 °C C ) 40 ) 0.08 T = 25 °C Ω C 1000 1000 30 0.06 ne ne ne ine T = 125 °C ne ine C 1st li V = 4.5 V GS 2nd l 1st li 20 2nd li 2nd l n-Resistance ( 0.04 2nd li O 100 ransconductance (S - 100 T - (on) S fs 10 D 0.02 g R V = 10 V GS 0 10 0.00 10 0 5 10 15 20 25 0 16 32 48 64 80 I - Drain Current (A) I - Drain Current (A) D D 2nd line 2nd line
Transconductance On-Resistance vs. Drain Current
Axis Title Axis Title 5000 10000 10 10000 I = 5 A ) D V = 30 V (V DS 4000 8 ) F p ltage 1000 o 1000 3000 ce ( 6 Ciss ne ne ine ne ne ine itan c ource V a 1st li 2nd l 1st li 2000 2nd li 2nd l 4 2nd li Cap 100 100 - ate-to-S C Crss G 1000 - 2 C GS oss V 0 10 0 10 0 15 30 45 60 0 20 40 60 80 100 V - Drain-to-Source Voltage (V) Q - Total Gate Charge (nC) DS g 2nd line 2nd line
Capacitance Gate Charge
S16-1123-Rev. A, 13-Jun-16
3
Document Number: 76628 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 80 10000 V = 10 V thru 5 V GS 80 64 ) 1000 1000 60 48 rrent (A ne ne rrent (A ine u ne ne ine u C C n V = 4 V GS 1st li n T = 25 °C C 2nd l 1st li 40 2nd li 2nd li 2nd l rai 32 rai D 100 D 100 - - I D I D 20 16 V = 3 V T = 125 °C GS C T = -55 °C C 0 10 0 10 0 2 4 6 8 10 0 2 4 6 8 10 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS 2nd line 2nd line
Output Characteristics Transfer Characteristics
Axis Title Axis Title 50 10000 0.10 10000 T = -55 °C C ) 40 ) 0.08 T = 25 °C Ω C 1000 1000 30 0.06 ne ne ne ine T = 125 °C ne ine C 1st li V = 4.5 V GS 2nd l 1st li 20 2nd li 2nd l n-Resistance ( 0.04 2nd li O 100 ransconductance (S - 100 T - (on) S fs 10 D 0.02 g R V = 10 V GS 0 10 0.00 10 0 5 10 15 20 25 0 16 32 48 64 80 I - Drain Current (A) I - Drain Current (A) D D 2nd line 2nd line
Transconductance On-Resistance vs. Drain Current
Axis Title Axis Title 5000 10000 10 10000 I = 5 A ) D V = 30 V (V DS 4000 8 ) F p ltage 1000 o 1000 3000 ce ( 6 Ciss ne ne ine ne ne ine itan c ource V a 1st li 2nd l 1st li 2000 2nd li 2nd l 4 2nd li Cap 100 100 - ate-to-S C Crss G 1000 - 2 C GS oss V 0 10 0 10 0 15 30 45 60 0 20 40 60 80 100 V - Drain-to-Source Voltage (V) Q - Total Gate Charge (nC) DS g 2nd line 2nd line
Capacitance Gate Charge
S16-1123-Rev. A, 13-Jun-16
3
Document Number: 76628 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000