Datasheet SQD50N06-09L (Vishay) - 3
| Fabricante | Vishay |
| Descripción | Automotive N-Channel 60 V (D-S) 175 °C MOSFET |
| Páginas / Página | 9 / 3 — SQD50N06-09L. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer. … |
| Formato / tamaño de archivo | PDF / 163 Kb |
| Idioma del documento | Inglés |
SQD50N06-09L. TYPICAL CHARACTERISTICS. Output Characteristics. Transfer. Characteristics. Transconductance
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SQD50N06-09L
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) 100 100 VGS = 10 V thru 5 V 80 80 VGS = 4 V 60 60 40 40 - Drain Current (A) - Drain Current (A) I D I D TC = 25 °C 20 V 20 GS = 3 V T V C = 125 °C GS = 2 V TC = - 55 °C 0 0 0 4 8 12 16 20 0 2 4 6 8 10 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS
Output Characteristics Transfer Characteristics
10 120 100 8 ) (S TC = - 55 °C 80 6 TC = 25 °C TC = 25 °C 60 conductance s 4 ran - Drain Current (A) T 40 I D - fsg TC = 125 °C 2 T 20 C = 125 °C TC = - 55 °C 0 0 0 1 2 3 4 5 0 10 20 30 40 50 V - Gate-to-Source Voltage (V) I GS D - Drain Current (A)
Transfer Characteristics Transconductance
0.025 4000 0.020 ) Ω 3000 Ciss tance ( 0.015 is s VGS = 4.5 V 2000 0.010 - On-Re VGS = 10 V (on) S C - Capacitance (pF) DR 1000 0.005 Coss Crss 0 0 0 20 40 60 80 100 0 10 20 30 40 50 60 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS
On-Resistance vs. Drain Current Capacitance
S11-2065-Rev. B, 24-Oct-11
3
Document Number: 68901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) 100 100 VGS = 10 V thru 5 V 80 80 VGS = 4 V 60 60 40 40 - Drain Current (A) - Drain Current (A) I D I D TC = 25 °C 20 V 20 GS = 3 V T V C = 125 °C GS = 2 V TC = - 55 °C 0 0 0 4 8 12 16 20 0 2 4 6 8 10 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS
Output Characteristics Transfer Characteristics
10 120 100 8 ) (S TC = - 55 °C 80 6 TC = 25 °C TC = 25 °C 60 conductance s 4 ran - Drain Current (A) T 40 I D - fsg TC = 125 °C 2 T 20 C = 125 °C TC = - 55 °C 0 0 0 1 2 3 4 5 0 10 20 30 40 50 V - Gate-to-Source Voltage (V) I GS D - Drain Current (A)
Transfer Characteristics Transconductance
0.025 4000 0.020 ) Ω 3000 Ciss tance ( 0.015 is s VGS = 4.5 V 2000 0.010 - On-Re VGS = 10 V (on) S C - Capacitance (pF) DR 1000 0.005 Coss Crss 0 0 0 20 40 60 80 100 0 10 20 30 40 50 60 I - Drain Current (A) V - Drain-to-Source Voltage (V) D DS
On-Resistance vs. Drain Current Capacitance
S11-2065-Rev. B, 24-Oct-11
3
Document Number: 68901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000