Datasheet SQD50N06-09L (Vishay) - 2

SQD50N06-09L
www.vishay.com Vishay Siliconix
SPECIFICATIONS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 μA 60 - - V Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA VGS = 0 V VDS = 60 V - - 1.0 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V, TJ = 125 °C - - 50 μA VGS = 0 V VDS = 60 V, TJ = 175 °C - - 250 On-State Drain Currenta I  D(on) VGS = 10 V VDS 5 V 50 - - A VGS = 10 V ID = 20 A - 0.0071 0.0090 VGS = 10 V ID = 20 A, TJ = 125 °C - - 0.016 Drain-Source On-State Resistancea R DS(on) VGS = 10 V ID = 20 A, TJ = 175 °C - - 0.019 VGS = 4.5 V ID = 10 A - 0.0094 0.013 Forward Transconductanceb gfs VDS = 15 V, ID = 20 A - 62 - S
Dynamicb
Input Capacitance Ciss - 2451 3065 Output Capacitance Coss VGS = 0 V VDS = 25 V, f = 1 MHz - 435 545 pF Reverse Transfer Capacitance Crss - 192 240 Total Gate Chargec Qg - 48 72 Gate-Source Chargec Qgs VGS = 10 V VDS = 30 V, ID = 50 A - 7.1 - nC Gate-Drain Chargec Qgd - 13.5 - Gate Resistance Rg f = 1 MHz 0.85 1.7 2.6 Turn-On Delay Timec td(on) - 10 15 Rise Timec tr V - 11 17 DD = 30 V, RL = 0.6 ns I Turn-Off Delay Timec t D  50 A, VGEN = 10 V, Rg = 1 d(off) - 27 41 Fall Timec tf - 8 12
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta ISM - - 200 A Forward Voltage VSD IF = 20 A, VGS = 0 V - 0.82 1.5 V
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2065-Rev. B, 24-Oct-11
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