Datasheet SQD50N06-09L (Vishay)
| Fabricante | Vishay |
| Descripción | Automotive N-Channel 60 V (D-S) 175 °C MOSFET |
| Páginas / Página | 9 / 1 — SQD50N06-09L. Automotive N-Channel 60 V (D-S) 175 °C MOSFET. FEATURES. … |
| Formato / tamaño de archivo | PDF / 163 Kb |
| Idioma del documento | Inglés |
SQD50N06-09L. Automotive N-Channel 60 V (D-S) 175 °C MOSFET. FEATURES. PRODUCT SUMMARY
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SQD50N06-09L
www.vishay.com Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V) 60
Definition
RDS(on) () at VGS = 10 V 0.009 • TrenchFET® Power MOSFET RDS(on) () at VGS = 4.5 V 0.013 • 100 % Rg and UIS Tested ID (A) 50 • Compliant to RoHS Directive 2002/95/EC Configuration Single • AEC-Q101 Qualifiedd D
TO-252
G Drain Connected to Tab S G D S Top View N-Channel MOSFET
ORDERING INFORMATION
Package TO-252 Lead (Pb)-free and Halogen-free SQD50N06-09L-GE3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 TC = 25 °Ca 50 Continuous Drain Current ID TC = 125 °C 49 Continuous Source Current (Diode Conduction)a IS 50 A Pulsed Drain Currentb IDM 200 Single Pulse Avalanche Energy IAS 48 L = 0.1 mH Single Pulse Avalanche Current EAS 115 mJ TC = 25 °C 136 Maximum Power Dissipationb PD W TC = 125 °C 45 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mountc RthJA 50 °C/W Junction-to-Case (Drain) RthJC 1.1
Notes
a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S11-2065-Rev. B, 24-Oct-11
1
Document Number: 68901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V) 60
Definition
RDS(on) () at VGS = 10 V 0.009 • TrenchFET® Power MOSFET RDS(on) () at VGS = 4.5 V 0.013 • 100 % Rg and UIS Tested ID (A) 50 • Compliant to RoHS Directive 2002/95/EC Configuration Single • AEC-Q101 Qualifiedd D
TO-252
G Drain Connected to Tab S G D S Top View N-Channel MOSFET
ORDERING INFORMATION
Package TO-252 Lead (Pb)-free and Halogen-free SQD50N06-09L-GE3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ± 20 TC = 25 °Ca 50 Continuous Drain Current ID TC = 125 °C 49 Continuous Source Current (Diode Conduction)a IS 50 A Pulsed Drain Currentb IDM 200 Single Pulse Avalanche Energy IAS 48 L = 0.1 mH Single Pulse Avalanche Current EAS 115 mJ TC = 25 °C 136 Maximum Power Dissipationb PD W TC = 125 °C 45 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 °C
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT
Junction-to-Ambient PCB Mountc RthJA 50 °C/W Junction-to-Case (Drain) RthJC 1.1
Notes
a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S11-2065-Rev. B, 24-Oct-11
1
Document Number: 68901 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000