Datasheet C3M0016120K (Wolfspeed) - 8
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode |
| Páginas / Página | 12 / 8 — Typical Performance. 8.0. 4.0. Conditions:. J = 25 °C. DS = 75 A. 3.5. DD … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
Typical Performance. 8.0. 4.0. Conditions:. J = 25 °C. DS = 75 A. 3.5. DD = 800 V. Total. G(ext) = 2.5 Ω. 6.0. GS = -4V/+15 V. 3.0
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Typical Performance 8.0 4.0 Conditions: Conditions: T I J = 25 °C DS = 75 A V 3.5 V DD = 800 V DD = 800 V E I Total R DS = 75 A G(ext) = 2.5 Ω 6.0 V V E GS = -4V/+15 V 3.0 GS = -4V/+15 V Total FWD = C3M0016120K FWD = C3M0016120K L = 65.7 μH FWD = C4D20120A J) J) 2.5 L = 65.7 μH (m E E (m On 4.0 On 2.0 ETotal with diode 1.5 itching Loss itching Loss EOn with diode Sw 2.0 Sw 1.0 E E Off Off with diode 0.5 EOff 0.0 0.0 0 5 10 15 20 25 0 25 50 75 100 125 150 175 200 External Gate Resistor RG(ext) (Ohms) Junction Temperature, TJ (°C)
Figure 26. Clamped Inductive Switching Energy vs. Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Temperature
300 Conditions: TJ = 25 °C VDD = 800 V IDS = 75 A VGS = -4V/+15 V FWD = C3M0016120K 200 L = 65.7 μH es (ns) td(off) itching Tim t 100 d(on) Sw tr tf 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R Figure 28. Switching Times Definition G(ext)
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C3M0016120K Rev. -, 04-2019
Figure 26. Clamped Inductive Switching Energy vs. Figure 25. Clamped Inductive Switching Energy vs. RG(ext) Temperature
300 Conditions: TJ = 25 °C VDD = 800 V IDS = 75 A VGS = -4V/+15 V FWD = C3M0016120K 200 L = 65.7 μH es (ns) td(off) itching Tim t 100 d(on) Sw tr tf 0 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R Figure 28. Switching Times Definition G(ext)
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C3M0016120K Rev. -, 04-2019