Datasheet C3M0016120K (Wolfspeed) - 2
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode |
| Páginas / Página | 12 / 2 — Electrical Characteristics. Symbol. Parameter. Min. Typ. Max. Unit. Test … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
Electrical Characteristics. Symbol. Parameter. Min. Typ. Max. Unit. Test Conditions. Note
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Electrical Characteristics
(T = 25˚C unless otherwise specified) C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA 1.8 2.5 3.6 V VDS = VGS, ID = 23 mA VGS(th) Gate Threshold Voltage Fig. 11 2.0 V VDS = VGS, ID = 23 mA, TJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 11.2 16 22.3 V R GS = 15 V, ID = 75 A Fig. 4, DS(on) Drain-Source On-State Resistance mΩ 5, 6 28.8 VGS = 15 V, ID = 75 A, TJ = 175ºC 53 V g DS= 20 V, IDS= 75 A fs Transconductance S Fig. 7 47 VDS= 20 V, IDS= 75 A, TJ = 175ºC Ciss Input Capacitance 6085 VGS = 0 V, VDS = 1000 V Coss Output Capacitance 230 pF Fig. 17, f = 1 MHz 18 Crss Reverse Transfer Capacitance 13 VAC = 25 mV Eoss Coss Stored Energy 130 μJ Fig. 16 EON Turn-On Switching Energy (SiC Diode FWD) 1.1 V = 75 A, mJ DS = 800 V, VGS = -4 V/+15 V, ID Fig. 26 R = 2.5Ω, L= 65.7 μH, Tj = 175ºC EOFF Turn Off Switching Energy (SiC Diode FWD) 0.8 G(ext) EON Turn-On Switching Energy (Body Diode FWD) 2.3 V = 75 A, mJ DS = 800 V, VGS = -4 V/+15 V, ID Fig. 26 EOFF Turn Off Switching Energy (Body Diode FWD) 0.6 R = 2.5Ω, L= 65.7 μH, Tj = 175ºC G(ext) td(on) Turn-On Delay Time 34 VDD = 800 V, VGS = -4 V/15 V tr Rise Time 33 ns RG(ext) = 2.5 Ω, I = 75 A, L= 65.7 Fig. 27 D td(off) Turn-Off Delay Time 65 Timing relative to V , Inductive load DS tf Fall Time 13 RG(int) Internal Gate Resistance 2.6 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 67 VDS = 800 V, VGS = -4 V/15 V Qgd Gate to Drain Charge 61 nC ID = 75 A Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 211
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C3M0016120K Rev. -, 04-2019
(T = 25˚C unless otherwise specified) C
Symbol Parameter Min. Typ. Max. Unit Test Conditions Note
V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0 V, ID = 100 μA 1.8 2.5 3.6 V VDS = VGS, ID = 23 mA VGS(th) Gate Threshold Voltage Fig. 11 2.0 V VDS = VGS, ID = 23 mA, TJ = 175ºC IDSS Zero Gate Voltage Drain Current 1 50 μA VDS = 1200 V, VGS = 0 V IGSS Gate-Source Leakage Current 10 250 nA VGS = 15 V, VDS = 0 V 11.2 16 22.3 V R GS = 15 V, ID = 75 A Fig. 4, DS(on) Drain-Source On-State Resistance mΩ 5, 6 28.8 VGS = 15 V, ID = 75 A, TJ = 175ºC 53 V g DS= 20 V, IDS= 75 A fs Transconductance S Fig. 7 47 VDS= 20 V, IDS= 75 A, TJ = 175ºC Ciss Input Capacitance 6085 VGS = 0 V, VDS = 1000 V Coss Output Capacitance 230 pF Fig. 17, f = 1 MHz 18 Crss Reverse Transfer Capacitance 13 VAC = 25 mV Eoss Coss Stored Energy 130 μJ Fig. 16 EON Turn-On Switching Energy (SiC Diode FWD) 1.1 V = 75 A, mJ DS = 800 V, VGS = -4 V/+15 V, ID Fig. 26 R = 2.5Ω, L= 65.7 μH, Tj = 175ºC EOFF Turn Off Switching Energy (SiC Diode FWD) 0.8 G(ext) EON Turn-On Switching Energy (Body Diode FWD) 2.3 V = 75 A, mJ DS = 800 V, VGS = -4 V/+15 V, ID Fig. 26 EOFF Turn Off Switching Energy (Body Diode FWD) 0.6 R = 2.5Ω, L= 65.7 μH, Tj = 175ºC G(ext) td(on) Turn-On Delay Time 34 VDD = 800 V, VGS = -4 V/15 V tr Rise Time 33 ns RG(ext) = 2.5 Ω, I = 75 A, L= 65.7 Fig. 27 D td(off) Turn-Off Delay Time 65 Timing relative to V , Inductive load DS tf Fall Time 13 RG(int) Internal Gate Resistance 2.6 Ω f = 1 MHz, VAC = 25 mV Qgs Gate to Source Charge 67 VDS = 800 V, VGS = -4 V/15 V Qgd Gate to Drain Charge 61 nC ID = 75 A Fig. 12 Per IEC60747-8-4 pg 21 Qg Total Gate Charge 211
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C3M0016120K Rev. -, 04-2019