Datasheet C3M0016120K (Wolfspeed) - 4
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode |
| Páginas / Página | 12 / 4 — Typical Performance. 250. Conditions:. VGS = 15V. TJ = -40 °C. VGS = 13V. … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
Typical Performance. 250. Conditions:. VGS = 15V. TJ = -40 °C. VGS = 13V. GS = 13V. J = 25 °C. tp = < 200 µs. VGS = 11V. 200. (A). , I DS. 150
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Typical Performance 250 250 Conditions: VGS = 15V Conditions: VGS = 15V V TJ = -40 °C VGS = 13V T GS = 13V J = 25 °C tp = < 200 µs VGS = 11V tp = < 200 µs VGS = 11V 200 200 (A) (A) , I DS , I DS 150 150 VGS = 9V rent rent ce Cur VGS = 9V ce Cur 100 100 in-Sour in-Sour Dra 50 Dra 50 VGS = 7V VGS = 7V 0 0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -40 ºC Figure 2. Output Characteristics TJ = 25 ºC
250 2.0 Conditions: Conditions: V T GS = 15V J = 175 °C 1.8 IDS = 75 A tp = < 200 µs VGS = 13V VGS = 15 V 200 1.6 tp < 200 µs VGS = 11V VGS = 9V .) (A) 1.4 (P.U , I DS n 150 O 1.2 rent 1.0 e, R DS ce Cur 100 VGS = 7V 0.8 0.6 in-Sour On Resistanc Dra 50 0.4 0.2 0 0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 -40 -20 0 20 40 60 80 100 120 140 160 180 Drain-Source Voltage, V Junction Temperature, TJ (°C) DS (V)
Figure 3. Output Characteristics TJ = 175 ºC Figure 4. Normalized On-Resistance vs. Temperature
50 40 Conditions: Conditions: 45 VGS = 15 V I t 35 DS = 75 A p < 200 µs tp < 200 µs 40 ) 30 35 T s) hms J = 175 °C VGS = 11 V 30 Ohm 25 (mO (m n V On GS = 13 V 25 O 20 20 TJ = 25 °C e, R DS VGS = 15 V ance, R DS 15 15 TJ = -40 °C 10 10 On Resist On Resistanc 5 5 0 0 0 50 100 150 200 250 300 -40 -20 0 20 40 60 80 100 120 140 160 180 Drain-Source Current, IDS (A) Junction Temperature, TJ (°C)
Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature For Various Temperatures For Various Gate Voltage
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C3M0016120K Rev. -, 04-2019
Figure 1. Output Characteristics TJ = -40 ºC Figure 2. Output Characteristics TJ = 25 ºC
250 2.0 Conditions: Conditions: V T GS = 15V J = 175 °C 1.8 IDS = 75 A tp = < 200 µs VGS = 13V VGS = 15 V 200 1.6 tp < 200 µs VGS = 11V VGS = 9V .) (A) 1.4 (P.U , I DS n 150 O 1.2 rent 1.0 e, R DS ce Cur 100 VGS = 7V 0.8 0.6 in-Sour On Resistanc Dra 50 0.4 0.2 0 0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 -40 -20 0 20 40 60 80 100 120 140 160 180 Drain-Source Voltage, V Junction Temperature, TJ (°C) DS (V)
Figure 3. Output Characteristics TJ = 175 ºC Figure 4. Normalized On-Resistance vs. Temperature
50 40 Conditions: Conditions: 45 VGS = 15 V I t 35 DS = 75 A p < 200 µs tp < 200 µs 40 ) 30 35 T s) hms J = 175 °C VGS = 11 V 30 Ohm 25 (mO (m n V On GS = 13 V 25 O 20 20 TJ = 25 °C e, R DS VGS = 15 V ance, R DS 15 15 TJ = -40 °C 10 10 On Resist On Resistanc 5 5 0 0 0 50 100 150 200 250 300 -40 -20 0 20 40 60 80 100 120 140 160 180 Drain-Source Current, IDS (A) Junction Temperature, TJ (°C)
Figure 5. On-Resistance vs. Drain Current Figure 6. On-Resistance vs. Temperature For Various Temperatures For Various Gate Voltage
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C3M0016120K Rev. -, 04-2019