Datasheet C3M0016120K (Wolfspeed) - 7
| Fabricante | Wolfspeed |
| Descripción | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode |
| Páginas / Página | 12 / 7 — Typical Performance. 120. 600. Conditions:. (A). TJ ≤ 175 °C. ) 100. 500. … |
| Formato / tamaño de archivo | PDF / 1.1 Mb |
| Idioma del documento | Inglés |
Typical Performance. 120. 600. Conditions:. (A). TJ ≤ 175 °C. ) 100. 500. (DC. (W). er, P tot 400. Current, I DS us 60. ted Pow 300. Dissipa
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Typical Performance 120 600 Conditions: Conditions: (A) TJ ≤ 175 °C TJ ≤ 175 °C ) 100 500 (DC (W) 80 er, P tot 400 Current, I DS us 60 ted Pow 300 40 Dissipa ce Contino 200 um 20 in-Sour axim 100 M Dra 0 0 -55 -30 -5 20 45 70 95 120 145 170 -55 -30 -5 20 45 70 95 120 145 170 Case Temperature, TC (°C) Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Case Temperature
1 100.00 C/W) Limited by RDS On 10 µs o ( (A) 100 µs 0.5 1 ms t, I DS 10.00 100E-3 0.3 100 ms pedance, Z thJC 0.1 e Curren 1.00 0.05 10E-3 0.02 in-Sourc 0.01 Dra 0.10 ction To Case Im Conditions: T Jun SinglePulse C = 25 °C D = 0, Parameter: t p 1E-3 0.01 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 0.1 1 10 100 1000 Time, t Drain-Source Voltage, V p (s) DS (V)
Figure 21. Transient Thermal Impedance Figure 22. Safe Operating Area (Junction - Case)
2.5 4.0 Conditions: Conditions: ETotal TJ = 25 °C TJ = 25 °C V 3.5 DD = 600 V E V Total DD = 800 V 2.0 RG(ext) = 2.5 Ω RG(ext) = 2.5 Ω VGS = -4V/+15 V 3.0 VGS = -4V/+15 V FWD = C3M0016120K FWD = C3M0075120D EOn J) L = 57.6 μH L = 57.6 μH 1.5 J) 2.5 2.0 EOn 1.0 1.5 itching Loss (m itching Loss (m Sw Sw 1.0 0.5 EOff EOff 0.5 0.0 0.0 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 Drain to Source Current, IDS (A) Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V = 600V) Drain Current (V = 800V) DD DD
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C3M0016120K Rev. -, 04-2019
Figure 19. Continuous Drain Current Derating vs. Figure 20. Maximum Power Dissipation Derating vs. Case Temperature Case Temperature
1 100.00 C/W) Limited by RDS On 10 µs o ( (A) 100 µs 0.5 1 ms t, I DS 10.00 100E-3 0.3 100 ms pedance, Z thJC 0.1 e Curren 1.00 0.05 10E-3 0.02 in-Sourc 0.01 Dra 0.10 ction To Case Im Conditions: T Jun SinglePulse C = 25 °C D = 0, Parameter: t p 1E-3 0.01 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1 0.1 1 10 100 1000 Time, t Drain-Source Voltage, V p (s) DS (V)
Figure 21. Transient Thermal Impedance Figure 22. Safe Operating Area (Junction - Case)
2.5 4.0 Conditions: Conditions: ETotal TJ = 25 °C TJ = 25 °C V 3.5 DD = 600 V E V Total DD = 800 V 2.0 RG(ext) = 2.5 Ω RG(ext) = 2.5 Ω VGS = -4V/+15 V 3.0 VGS = -4V/+15 V FWD = C3M0016120K FWD = C3M0075120D EOn J) L = 57.6 μH L = 57.6 μH 1.5 J) 2.5 2.0 EOn 1.0 1.5 itching Loss (m itching Loss (m Sw Sw 1.0 0.5 EOff EOff 0.5 0.0 0.0 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 Drain to Source Current, IDS (A) Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs. Figure 24. Clamped Inductive Switching Energy vs. Drain Current (V = 600V) Drain Current (V = 800V) DD DD
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C3M0016120K Rev. -, 04-2019