HMC395 V02.0109 InGaP HBT GAIN BLOCKMMIC AMPLIFIER, DC - 4 GHzAbsolute Maximum Ratings Collector Bias Voltage (Vcc) +7.0 Vdc RF Input Power (RFIN)(Vcc = +5.0 Vdc) +10 dBm 2 Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) 0.475 W (derate 7.3 mW/°C above 85 °C) IP Thermal Resistance 137 °C/W H (junction to die bottom) Storage Temperature -65 to +150 °C - C Operating Temperature -55 to +85 °C S R ELECTROSTATIC SENSITIVE DEVICE IE OBSERVE HANDLING PRECAUTIONS IF L P M Outline Drawing K A OC BL IN A NOTES: 1. ALL DIMENSIONS IN INCHES [MILLIMETERS] 2. ALL TOLERANCES ARE ±0.001 (0.025) 3. DIE THICKNESS IS 0.004” (0.100) BACKSIDE IS GROUND 4. BOND PADS ARE 0.004” (0.100) SQUARE & G 5. BOND PAD SPACING, CTR-CTR: 0.006 (0.150) R 6. BACKSIDE METALLIZATION: GOLD 7. BOND PAD METALLIZATION: GOLD E IV R Die Packaging Information [1] D Standard Alternate GP-3 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. Information furnish F e o d r pri by An ce, de alog Devic leis vie s rby eli, a eve nd to pla d to be accur ce o ate an r d der relia s ble , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 20 Alpha Road, Chelmsford, MA 01824 Phone rights of third parties that may result from its use. Specifications subject to change without notice. No : 978 Phon -e25 : 7 0 81 - - 3 3 3 29 4 - 3 F 470 ax 0 • O : 978 rder o - nl 25 in 0 e a - t 33 ww 73 license is granted by implication or otherwise under any patent or patent rights of Analog Devices. w.analog.com 2 - 5 Order On- Trademarks and registered trademarks are the property of their respective owners. line at www.hi A tptipte.co licatio m n Support: Phone: 1-800-ANALOG-D