Datasheet HMC395 (Analog Devices) - 3

HMC395
V02.0109
InGaP HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz P1dB vs. Temperature Psat vs. Temperature
2 20 20 +25C 17 17 +85C -55C IP 14 14 H 11 Psat (dBm) 11 P1dB (dBm) - C +25C 8 8 +85C S -55C R 5 5 IE 1 1.5 2 2.5 3 3.5 4 4.5 5 1 1.5 2 2.5 3 3.5 4 4.5 5 FREQUENCY (GHz) FREQUENCY (GHz) IF L P M
Power Compression @ 1 GHz Power Compression @ 4 GHz
20 20 K A 15 15 OC 10 10 5 5 BL Pout IN 0 Gain 0 PAE A Pout -5 -5 Gain Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) PAE -10 -10 & G -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 8 -20 -16 -12 -8 -4 0 4 INPUT POWER (dBm) INPUT POWER (dBm) R E IV
Gain, Power, Output IP3 & Supply
R
Output IP3 vs. Temperature Current vs.Supply Voltage @ 1 GHz
) D 40 80 34 35 30 30 60 26 25 Ic q (mA) Psat (dBm), IP3 (dBm 20 40 22 IP3 (dBm) 15 +25C 18 +85C -55C 10 Gain 20 P1dB Psat 14 5 Icq OIP3 0 0 10 GAIN (dB), P1dB (dBm), 4.5 4.75 5 5.25 5.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Vs(Vdc) FREQUENCY (GHz) Information furnish F ed obr pri y Anal ce, de og Device li s vie s r beyli, a eve nd to pla d to be accura ce o te and rder reliabl s e , pl . Ho ease co wever, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other ntact Hittite Microwave Corporation: One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106 rights of third parties that may result from its use. Specifications subject to change without notice. No
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