Datasheet LTC1100 (Analog Devices) - 3

LTC1100
ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VS =
±
5V, RL = 10k, CC = 1000pF, unless otherwise noted. LTC1100AMJ (Note 4) LTC1100MJ PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Gain Error 0.01 0.05 0.01 0.075 ±% ● 0.11 0.150 ±% Gain Nonlinearity 3 8 3 20 ppm ● 40 65 ppm Input Offset Voltage (Note 2) ±1 ±10 ±1 ±10 µV Input Offset Voltage Drift (Note 2) ● ±5 ±100 ±5 ±100 nV/°C Input Noise Voltage DC to 10Hz, TA = 25°C 1.9 1.9 µVP-P Input Bias Current 5 50 5 65 pA ● 300 450 pA Input Offset Current ● 80 120 pA Common Mode Rejection Ratio VCM = −4.7V to 2.3V ● 100 90 dB Power Supply Rejection Ratio VS = ±2.375V to ±8V ● 115 95 dB Output Voltage Swing RL= 10k, VS = ±8V ● – 7.4 7.4 – 7.4 7.4 V RL= 2k, VS = ±8V ● – 7.0 6.0 – 7.0 6.0 V Supply Current 2.4 2.4 3.3 mA ● 4.2 4.6 mA Internal Sampling Frequency 2.8 2.8 kHz Bandwidth 18 18 kHz
ELECTRICAL CHARACTERISTICS The
●
denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25
°
C. VS =
±
5V, RL = 10k, CC = 1000pF, unless otherwise specified. LTC1100ACS LTC1100CSW PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS
Gain Error TA = 25°C, A V =100 0.01 0.05 0.01 0.075 ±% A V =100 ● 0.10 0.150 ±% A V =10 0.01 0.04 0.01 0.060 ±% A V =10 ● 0.10 0.150 ±% Gain Nonlinearity TA = 25°C, A V =100 3 8 3 20 ppm A V =100 ● 12 30 12 60 ppm A V=10 1 8 1 10 ppm A V =10 ● 25 40 ppm Input Offset Voltage (Note 2) ±1 ±10 ±1 ±10 µV Input Offset Voltage Drift (Note 2) ● ±5 ±100 ±5 ±100 nV/°C Input Noise Voltage DC to 10Hz, TA = 25°C 1.9 1.9 µVP-P Input Bias Current 2.5 50 2.5 65 pA ● 120 135 pA Input Offset Current ● 10 50 10 65 pA Common Mode Rejection Ratio VCM= −4.7V to 2.3V, A V =100 ● 104 115 90 110 dB A V =10 ● 95 85 dB Power Supply Rejection Ratio VS = ±2.375V to ±8V ● 120 105 dB 1100fc 3