Datasheet 2N3904, MMBT3904, PZT3904 (Fairchild) - 4

VCESAT-COLLECTOR-EMITTER VOLTAGE (V) h FE -TYP ICAL PULSED CURRE NT GAIN 500
V CE = 5V 400
125 °C 300
25 °C 200
-40 °C 100
0
0.1 IC 1
10
-COLLECTOR CURRENT (mA) 100 125 °C 0.1
25 °C 0.05 0.1 125 °C VCE = 5V 1
10
-COLLECTOR CURRENT (mA) 25 °C 125 °C 0.2
0.1 100 1
10
I C -COLLECTOR CURRENT (mA) 100 Figure 4. Base-Emitter On Voltage vs.
Collector Current Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current 10 500 f = 1.0 MHz
CAPACITANCE (pF) VCB = 30V 10
1
0.1 25 -40 °C 0.4 0.4 100 100 0.6 25 °C 0.6 0.1 1
10
I C -COLLECTOR CURRENT (mA) 1 0.8 -40 °C IC ICBO-COLLECTOR CURRENT (nA) -40 °C VBE(ON)-BASE-EMITTER ON VOLTAGE (V) VBESAT-BASE-EMITTER VOLTAGE (V) β = 10 0.8 β = 10 Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current Figure 1. Typical Pulsed Current Gain vs. Collector
Current 1 0.15 50
75
100
125
TA -AMBIENT TEMPERATURE ( °C) 4
3 C ibo 2
C obo 1
0.1 150 1
10
REVERSE BIAS VOLTAGE (V) 100 Figure 6. Capacitance vs. Reverse Bias Voltage Figure 5. Collector Cut-Off Current vs.
Ambient Temperature © 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 5 www.fairchildsemi.com
4 2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier Typical Performance Characteristics