Datasheet 2N3904, MMBT3904, PZT3904 (Fairchild) - 3

Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 V(BR)CBO Collector-Base Breakdown Voltage V(BR)EBO
IBL
ICEX 40 V IC = 10 μA, IE = 0 60 V Emitter-Base Breakdown Voltage IE = 10 μA, IC = 0 6.0 Base Cut-Off Current VCE = 30 V, VEB = 3 V 50 nA Collector Cut-Off Current VCE = 30 V, VEB = 3 V 50 nA V (5) ON CHARACTERISTICS hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 1.0 V 40 IC = 1.0 mA, VCE = 1.0 V 70 IC = 10 mA, VCE = 1.0 V 100 IC = 50 mA, VCE = 1.0 V 60 IC =100 mA, VCE = 1.0V 30 300 IC = 10 mA, IB = 1.0 mA 0.2 IC = 50 mA, IB = 5.0 mA 0.3 IC = 10 mA, IB = 1.0 mA 0.65 IC = 50 mA, IB = 5.0 mA 0.85
0.95 V
V SMALL SIGNAL CHARACTERISTICS
Current Gain -Bandwidth Product IC = 10 mA, VCE = 20 V,
f = 100 MHz Cobo Output Capacitance VCB = 5.0 V, IE = 0,
f = 100 kHz 4.0 pF Cibo Input Capacitance VEB = 0.5 V, IC = 0,
f = 100 kHz 8.0 pF NF Noise Figure IC = 100 μA, VCE = 5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz 5.0 dB VCC = 3.0 V, VBE = 0.5 V
IC = 10 mA, IB1 = 1.0 mA 35 ns 35 ns VCC = 3.0 V, IC = 10 mA,
IB1 = IB2 = 1.0 mA 200 ns 50 ns fT 300 MHz SWITCHING CHARACTERISTICS
td Delay Time tr Rise Time ts Storage Time tf Fall Time Note:
5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%. © 2002 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. 1.1.0 www.fairchildsemi.com
3 2N3904 / MMBT3904 / PZT3904 — NPN General-Purpose Amplifier Electrical Characteristics