Datasheet IRF530N (International Rectifier) - 7

FabricanteInternational Rectifier
DescripciónHEXFET Power MOSFET
Páginas / Página9 / 7 — Peak Diode Recovery dv/dt Test Circuit. D.U.T. Fig 14
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Peak Diode Recovery dv/dt Test Circuit. D.U.T. Fig 14

Peak Diode Recovery dv/dt Test Circuit D.U.T Fig 14

Versión de texto del documento

IRF530N
Peak Diode Recovery dv/dt Test Circuit
+ Circuit Layout Considerations
D.U.T
* • Low Stray Inductance ƒ • Ground Plane • Low Leakage Inductance Current Transformer - + ‚ „ - + -  RG • dv/dt controlled by R + G • ISD controlled by Duty Factor "D" V - DD • D.U.T. - Device Under Test VGS * Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. Period D = P.W. Period V [ GS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt V [ DD ] Re-Applied Voltage Body Diode Forward Drop Inductor Curent Ripple ≤ 5% [ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14.
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