Datasheet BSS308PE (Infineon) - 5
| Fabricante | Infineon |
| Descripción | OptiMOS P3 Small-Signal-Transistor |
| Páginas / Página | 9 / 5 — BSS308PE. 5 Typ. output characteristics. 6 Typ. drain-source on … |
| Revisión | 02_03 |
| Formato / tamaño de archivo | PDF / 246 Kb |
| Idioma del documento | Inglés |
BSS308PE. 5 Typ. output characteristics. 6 Typ. drain-source on resistance. 400. 350. 300. 250. [A]. 200. 150. 100. 0.0. 0.5. 1.0. 1.5. 2.0. 2.5. 3.0. 3.5
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BSS308PE 5 Typ. output characteristics 6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
6 400
4.5 V 2.8 V 10 V
350
4 V
5
3 V 3.5 V
300 4 250
3.3 V ] Ω 3.3 V [m
[A] 3 200
on)
I D
DS( 3.5 V R
150 2
4 V 3 V
100
4.5 V
1
10 V 2.8 V
50 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1 1.5 2 2.5 3 3.5 4 V DS [V]
I D [A]
7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
4 8 3 6
25 °C
] 2 [S 4 [A] fs I D g 1 2
150 °C
0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 V I GS [V] D [A]
Rev 2.03 page 5 2011-07-08
I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS
6 400
4.5 V 2.8 V 10 V
350
4 V
5
3 V 3.5 V
300 4 250
3.3 V ] Ω 3.3 V [m
[A] 3 200
on)
I D
DS( 3.5 V R
150 2
4 V 3 V
100
4.5 V
1
10 V 2.8 V
50 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1 1.5 2 2.5 3 3.5 4 V DS [V]
I D [A]
7 Typ. transfer characteristics 8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C
4 8 3 6
25 °C
] 2 [S 4 [A] fs I D g 1 2
150 °C
0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 V I GS [V] D [A]
Rev 2.03 page 5 2011-07-08