Datasheet BSS308PE (Infineon) - 4
| Fabricante | Infineon |
| Descripción | OptiMOS P3 Small-Signal-Transistor |
| Páginas / Página | 9 / 4 — BSS308PE. 1 Power dissipation. 2 Drain current. 2.2. 0.5. 1.8. 1.6. … |
| Revisión | 02_03 |
| Formato / tamaño de archivo | PDF / 246 Kb |
| Idioma del documento | Inglés |
BSS308PE. 1 Power dissipation. 2 Drain current. 2.2. 0.5. 1.8. 1.6. 0.375. 1.4. 1.2. [W]. [A]. tot 0.25. 0.8. 0.6. 0.125. 0.4. 0.2. 120. 160. 100. 140. A [°C]. [°C]
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BSS308PE 1 Power dissipation 2 Drain current
P tot=f(T A) I D=f(T A); V GS≥10 V
2.2 0.5 2 1.8 1.6 0.375 1.4 1.2 [W] [A] tot 0.25 I D P 1 0.8 0.6 0.125 0.4 0.2 0 0 0 40 80 120 160 0 20 40 60 80 100 120 140 160 T A [°C] T A [°C] 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T
101 103
1 µs 10 µs 100 µs 1 ms
100
0.5
102
10 ms 0.2
10-1
0.1 0.05
[A] [K/W] 101
0.02
I D A thJ
0.01
Z 10-2
DC single pulse
100 10-3 10-4 10-1 102 101 100 10-1 102 101 100 10-1 10-2 10-3 10-4 10-5 V DS [V] t p [s]
Rev 2.03 page 4 2011-07-08
P tot=f(T A) I D=f(T A); V GS≥10 V
2.2 0.5 2 1.8 1.6 0.375 1.4 1.2 [W] [A] tot 0.25 I D P 1 0.8 0.6 0.125 0.4 0.2 0 0 0 40 80 120 160 0 20 40 60 80 100 120 140 160 T A [°C] T A [°C] 3 Safe operating area 4 Max. transient thermal impedance
I D=f(V DS); T A=25 °C; D =0 Z thJA=f(t p) parameter: t p parameter: D =t p/T
101 103
1 µs 10 µs 100 µs 1 ms
100
0.5
102
10 ms 0.2
10-1
0.1 0.05
[A] [K/W] 101
0.02
I D A thJ
0.01
Z 10-2
DC single pulse
100 10-3 10-4 10-1 102 101 100 10-1 102 101 100 10-1 10-2 10-3 10-4 10-5 V DS [V] t p [s]
Rev 2.03 page 4 2011-07-08