Datasheet HER101G (Taiwan Semiconductor) - 3

FabricanteTaiwan Semiconductor
Descripción1A, 50V - 1000V High Efficient Rectifier
Páginas / Página6 / 3 — HER101G – HER108G. CHARACTERISTICS CURVES. Fig.1 Forward Current Derating …
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HER101G – HER108G. CHARACTERISTICS CURVES. Fig.1 Forward Current Derating Curve. Fig.2 Typical Junction Capacitance

HER101G – HER108G CHARACTERISTICS CURVES Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance

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HER101G – HER108G
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve Fig.2 Typical Junction Capacitance
2 100 ) A( TN RE ) F p( HER101G-HER105G CUR E RD A 1 NC A 10 CIT A ORW P F HER106G-HER108G CA GE RA E V f=1.0MHz A Vsig=50mVp-p 0 1 25 50 75 100 125 150 1 10 100 AMBIENT TEMPERATURE (°C) REVERSE VOLTAGE (V)
Fig.3 Typical Reverse Characteristics Fig.4 Typical Forward Characteristics
100 ) 10 A) A 10 µ ( T =100°C HER101G-HER104G J NT NT E E RR
UF1DL
H
W
E R105G RR 1 CU 10 D CU E R HER106G-HER108G A T =125°C RS J E ) T =25°C V J T =75°C 1 A( 0.1 J ORW F RE 1 OUS OUS NE NE 0.01 A T =25°C A T J T N N Pulse width 300μs A A T T 1% duty cycle 0.1 Pulse width INS INS 0.1 10 20 30 40 50 60 70 80 90 100 0.001 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FORWARD VOLTAGE (V)
Fig.5 Maximum Non-Repetitive Forward Surge Current
35 ) A( 30 8.3ms single half sine wave NT RE 25 UR C 20 RGE U S 15 RD A 10 ORW F K A 5 E P 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: L2104