Datasheet HER101G (Taiwan Semiconductor) - 2
Fabricante | Taiwan Semiconductor |
Descripción | 1A, 50V - 1000V High Efficient Rectifier |
Páginas / Página | 6 / 2 — HER101G – HER108G. THERMAL PERFORMANCE. PARAMETER. SYMBOL. TYP. UNIT. … |
Formato / tamaño de archivo | PDF / 535 Kb |
Idioma del documento | Inglés |
HER101G – HER108G. THERMAL PERFORMANCE. PARAMETER. SYMBOL. TYP. UNIT. ELECTRICAL SPECIFICATIONS. CONDITIONS. MAX. Notes:
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Versión de texto del documento
HER101G – HER108G
Taiwan Semiconductor
THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT
Junction-to-ambient thermal resistance RӨJA 60 °C/W Junction-to-case thermal resistance RӨJC 15 °C/W
ELECTRICAL SPECIFICATIONS
(TA = 25°C unless otherwise noted)
PARAMETER CONDITIONS SYMBOL TYP MAX UNIT
HER101G HER102G - 1.0 V HER103G HER104G Forward voltage(1) IF = 1A, TJ = 25°C VF HER105G - 1.3 V HER106G HER107G - 1.7 V HER108G TJ = 25°C - 5 µA Reverse current @ rated V (2) R IR TJ = 125°C - 150 µA HER101G HER102G HER103G 15 - pF HER104G Junction capacitance 1MHz, V HER105G R = 4.0V CJ HER106G HER107G 10 - pF HER108G HER101G HER102G HER103G - 50 ns HER104G I Reverse recovery time F = 0.5A, IR = 1.0A, HER105G t I rr rr = 0.25A HER106G HER107G - 75 ns HER108G
Notes:
1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms
ORDERING INFORMATION ORDERING CODE(1)(2) PACKAGE PACKING
HER1xG DO-204AL (DO-41) 5,000 / Tape & Reel HER1xG A0G DO-204AL (DO-41) 3,000 / Ammo box HER1xGH DO-204AL (DO-41) 5,000 / Tape & Reel HER1xGHA0G DO-204AL (DO-41) 3,000 / Ammo box
Notes:
1. “x” defines voltage from 50V (HER101G) to 1000V (HER108G) 2. “H” means AEC-Q101 qualified 2 Version: L2104