Datasheet CRCW0603 (Vishay) - 7

FabricanteVishay
DescripciónLead (Pb)-Bearing Thick Film Chip Resistors
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D/CRCW. TESTS AND REQUIREMENTS. TEST PROCEDURES AND REQUIREMENTS. REQUIREMENTS PERMISSIBLE. CHANGE (. IEC. PROCEDURE. 60068-2

D/CRCW TESTS AND REQUIREMENTS TEST PROCEDURES AND REQUIREMENTS REQUIREMENTS PERMISSIBLE CHANGE ( IEC PROCEDURE 60068-2

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D/CRCW
www.vishay.com Vishay
TESTS AND REQUIREMENTS
All executed tests are carried out in accordance with the The testing also covers most of the requirements specified following specifications: by EIA/IS-703 and JIS-C-5201-1. EN 60115-1, generic specification The tests are carried out under standard atmospheric EN 60115-8, sectional specification conditions in accordance with IEC 60068-1, 4.3, whereupon the following values are applied: EN 140401-802, detail specification Temperature: 15 °C to 35 °C IEC 60068-2-xx, test methods Relative humidity: 25 % to 75 % The parameters stated in the Test Procedures and Requirements table are based on the required tests and Air pressure: 86 kPa to 106 kPa (860 mbar to 1060 mbar). permitted limits of EN 140401-802. The table presents only A climatic category LCT / UCT / 56 is applied, defined by the the most important tests, for the full test schedule refer to lower category temperature (LCT), the upper category the documents listed above. However, some additional temperature (UCT), and the duration of exposure in the tests and a number of improvements against those damp heat, steady state test (56 days). The components are minimum requirements have been included. mounted for testing on boards in accordance with EN 60115-8, 2.4.2 unless otherwise specified.
TEST PROCEDURES AND REQUIREMENTS REQUIREMENTS PERMISSIBLE CHANGE (
Δ
R ) IEC EN PROCEDURE 60068-2 STABILITY CLASS 1 STABILITY CLASS 2 60115-1 (1) TEST TEST OR BETTER OR BETTER CLAUSE METHOD
Stability for product types: 1 Ω to 10 MΩ
D/CRCW
Measurements of 6.1 - - ± 1 % ± 5 % resistance and tolerance Temperature coefficient At (20 / -55 / 20) °C and 6.2 - ± 100 ppm/K ± 200 ppm/K of resistance (20 / 155 / 20) °C U = P x R 70 ≤ Umax. Endurance at rated 1.5 h on; 0.5 h off 7.1 - temperature 70 °C 70 °C; 1000 h ± (1 % R + 0.05 Ω) ± (2 % R + 0.1 Ω) 70 °C; 8000 h ± (2 % R + 0.1 Ω) ± (4 % R + 0.1 Ω) Endurance at maximum 7.3 - 155 °C; 1000 h ± (1 % R + 0.05 Ω) ± (2 % R + 0.1 Ω) temperature (40 ± 2) °C; 56 days; 10.4 78 (Cab) Damp heat, steady state ± (1 % R + 0.05 Ω) (93 ± 3) % RH (85 ± 2) °C; (85 ± 5) % RH; Damp heat, steady state, 10.5 67 (Cy) U = 0.1 x P x R ≤ 100 V; ± (1 % R + 0.05 Ω) ± (2 % R + 0.1 Ω) accelerated 85 1000 h 10.3 - Climatic sequence: 10.3.4.2 2 (Ba) Dry heat 125 °C; 16 h 10.3.4.3 30 (Db) Damp heat, cyclic 55 °C; 24 h; ≥ 90 % RH; 1 cycle 10.3.4.4 1 (Ab) Cold -55 °C; 2 h ± (1 % R + 0.05 Ω) ± (2 % R + 0.1 Ω) 10.3.4.5 13 (M) Low air pressure 8.5 kPa; 2 h; (25 ± 10) °C 55 °C; 5 days; 10.3.4.6 30 (Db) Damp heat, cyclic > 90 % RH; 5 cycles 10.3.4.7 - DC load U = P x R 70 ≤ Umax.; 1 min - 1 (Aa) Cold -55 °C; 2 h ± (0.25 % R + 0.05 Ω) ± (0.5 % R + 0.05 Ω) Rapid change 30 min. at -55 °C and 30 min. at 125 °C ± (1 % R + 0.05 Ω) 10.1 14 (Na) of temperature 1000 cycles no visible damage U = 2.5 x P x R 70 ≤ 2 x U 8.1 - Short-term overload max.; ± (2 % R + 0.05 Ω) whichever is the less severe; 5 s Severity no. 4: U = 10 x P x R Single pulse high voltage 70 ± (1 % R + 0.05 Ω) 8.2 - or U ≤ 2 x U overload max.; no visible damage whichever is the less severe; 10 pulses 10 μs / 700 μs Revision: 09-Jul-2024
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Document Number: 20008 For technical questions, contact: thickfilmchip@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000