Datasheet LM4040 (Diodes) - 3
| Fabricante | Diodes |
| Descripción | PRECISION MICROPOWER SHUNT VOLTAGE REFERENCE |
| Páginas / Página | 16 / 3 — LM4040. Electrical Characteristics. LM4040-30. Conditions. Symbol. … |
| Formato / tamaño de archivo | PDF / 1.6 Mb |
| Idioma del documento | Inglés |
LM4040. Electrical Characteristics. LM4040-30. Conditions. Symbol. Parameter. Typ. LM4040 LM4040 LM4040. B Limits C Limits D Limits. Unit
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LM4040 Electrical Characteristics
(continued) (Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-30 Conditions Symbol Parameter Typ LM4040 LM4040 LM4040 B Limits C Limits D Limits Unit
—
TA
Reverse Breakdown Voltage IR = 100µA +25°C 3.0 — — — V V +25°C ±6 ±15 ±30 REF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±26 ±34 ±59 mV -40 to +125°C 37 ±45 ±75 +25°C 47 62 62 67 IRMIN Minimum Operating Current — -40 to +85°C µA — 67 67 72 -40 to +125°C 70 70 75 IR = 10mA ±20 — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±15 ±100 ±100 ±150 ppm/°C IR = 100µA ±15 — — — +25°C 0.4 0.8 0.8 1.0 IRMIN ≤ IR ≤ 1mA -40 to +85°C — 1.1 1.1 1.3 -40 to +125°C 1.1 1.1 1.3 ΔVR/ΔIR Reverse Breakdown Change with Current mV +25°C 2.7 6.0 6.0 8.0 1mA ≤ IR ≤ 15mA -40 to +85°C — 9.0 9.0 11.0 -40 to +125°C 9.0 9.0 11.0 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz 0.4 0.9 0.9 1.2 Ω IAC = 0.1IR en Noise Voltage IR = 100µA 10Hz < f < 10kHz 35 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +125°C 0.08 — — — %
Electrical Characteristics
(cont.) (@TA = +25°C, unless otherwise specified.)
LM4040-33 Conditions Symbol Parameter Typ B Limits C Limits D Limits Units - TA
Reverse Breakdown Voltage IR = 100µA +25°C 3.3 V +25°C ±6.6 ±16.5 ±33 VREF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±28 ±38 ±65 mV -40 to +125°C ±40 ±50 ±83 +25°C 47 62 62 67 IRMIN Minimum Operating Current — -40 to +85°C 67 67 72 µA — -40 to +125°C 70 70 75 IR = 10mA ±20 — — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±15 ±100 ±100 ±150 ppm/°C IR = 100µA ±15 — +25°C 0.4 0.8 0.8 1 IRMIN IR -40 to +85°C 1.1 1.1 1.3 < 1mA — -40 to +125°C 1.1 1.1 1.3 ΔVR/ΔIR Reverse Breakdown Change With Current mV +25°C 2.7 6 6 8 1mA < IR -40 to +85°C 9.0 9 11 < 15mA — -40 to +125°C 9.0 9 11 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz, IAC = 0.4 0.9 0.9 1.2 Ω 0.1IR en Noise Voltage IR = 100µA, 10Hz < f < 10kHz 35 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to = +125°C 0.08 — — — % LM4040 3 of 16 August 2019 Document number: DS33195 Rev. 8 - 2
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(continued) (Test conditions: TA = +25°C, unless otherwise specified.)
LM4040-30 Conditions Symbol Parameter Typ LM4040 LM4040 LM4040 B Limits C Limits D Limits Unit
—
TA
Reverse Breakdown Voltage IR = 100µA +25°C 3.0 — — — V V +25°C ±6 ±15 ±30 REF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±26 ±34 ±59 mV -40 to +125°C 37 ±45 ±75 +25°C 47 62 62 67 IRMIN Minimum Operating Current — -40 to +85°C µA — 67 67 72 -40 to +125°C 70 70 75 IR = 10mA ±20 — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±15 ±100 ±100 ±150 ppm/°C IR = 100µA ±15 — — — +25°C 0.4 0.8 0.8 1.0 IRMIN ≤ IR ≤ 1mA -40 to +85°C — 1.1 1.1 1.3 -40 to +125°C 1.1 1.1 1.3 ΔVR/ΔIR Reverse Breakdown Change with Current mV +25°C 2.7 6.0 6.0 8.0 1mA ≤ IR ≤ 15mA -40 to +85°C — 9.0 9.0 11.0 -40 to +125°C 9.0 9.0 11.0 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz 0.4 0.9 0.9 1.2 Ω IAC = 0.1IR en Noise Voltage IR = 100µA 10Hz < f < 10kHz 35 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to +125°C 0.08 — — — %
Electrical Characteristics
(cont.) (@TA = +25°C, unless otherwise specified.)
LM4040-33 Conditions Symbol Parameter Typ B Limits C Limits D Limits Units - TA
Reverse Breakdown Voltage IR = 100µA +25°C 3.3 V +25°C ±6.6 ±16.5 ±33 VREF Reverse Breakdown Voltage Tolerance IR = 100µA -40 to +85°C — ±28 ±38 ±65 mV -40 to +125°C ±40 ±50 ±83 +25°C 47 62 62 67 IRMIN Minimum Operating Current — -40 to +85°C 67 67 72 µA — -40 to +125°C 70 70 75 IR = 10mA ±20 — — — — ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient IR = 1mA -40 to +125°C ±15 ±100 ±100 ±150 ppm/°C IR = 100µA ±15 — +25°C 0.4 0.8 0.8 1 IRMIN IR -40 to +85°C 1.1 1.1 1.3 < 1mA — -40 to +125°C 1.1 1.1 1.3 ΔVR/ΔIR Reverse Breakdown Change With Current mV +25°C 2.7 6 6 8 1mA < IR -40 to +85°C 9.0 9 11 < 15mA — -40 to +125°C 9.0 9 11 ZR Dynamic Output Impedance IR = 1mA, f = 120Hz, IAC = 0.4 0.9 0.9 1.2 Ω 0.1IR en Noise Voltage IR = 100µA, 10Hz < f < 10kHz 35 — — — µVRMS VR Long Term Stability (Non-Cumulative) t = 1000Hrs, IR = 100µA 120 — — — ppm VHYST Thermal Hysteresis ΔT = -40°C to = +125°C 0.08 — — — % LM4040 3 of 16 August 2019 Document number: DS33195 Rev. 8 - 2
www.diodes.com
© Diodes Incorporated Document Outline Printed Circuit Board Layout Considerations