Datasheet IRF2804, IRF2804S, IRF2804L (International Rectifier) - 4
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 12 / 4 — Fig 5. Fig 6. Fig 7. Fig 8 |
| Formato / tamaño de archivo | PDF / 292 Kb |
| Idioma del documento | Inglés |
Fig 5. Fig 6. Fig 7. Fig 8
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IRF2804/S/L 12000 20 VGS = 0V, f = 1 MHZ ID= 75A Ciss = Cgs + Cgd, Cds SHORTED ) VDS= 32V 10000 C V rss = Cgd ( 16 VDS= 20V C e oss = Cds + Cgd g ) at VDS= 8.0V F l 8000 o p( V e 12 e c c n Ciss r a u ti 6000 o c S a - p ot 8 a - e C t 4000 , a C G , S 4 G 2000 Coss V Crss 0 0 0 40 80 120 160 200 240 1 10 100 Q V G Total Gate Charge (nC) DS, Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000.0 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) A A T ( J = 175°C t t 1000 100.0 n n e e r r r r u u C C e ni cr ar u 100 10.0 o 100µsec D S e - s o r t- e n v i e ar R D 10 1msec , 1.0 , D I S TJ = 25°C I D Tc = 25°C Tj = 175°C 10msec V Single Pulse GS = 0V 1 0.1 0 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 2.2 V V DS , Drain-toSource Voltage (V) SD, Source-toDrain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs. Drain-to-Source Voltage Gate-to-Source Voltage 1000.0 10000 OPERATION IN THIS AREA LIMITED BY RDS(on) A A T ( J = 175°C t t 1000 100.0 n n e e r r r r u u C C e ni cr ar u 100 10.0 o 100µsec D S e - s o r t- e n v i e ar R D 10 1msec , 1.0 , D I S TJ = 25°C I D Tc = 25°C Tj = 175°C 10msec V Single Pulse GS = 0V 1 0.1 0 1 10 100 1000 0.2 0.6 1.0 1.4 1.8 2.2 V V DS , Drain-toSource Voltage (V) SD, Source-toDrain Voltage (V)
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area Forward Voltage 4 www.irf.com