Datasheet MTP50P03HDLG (ON Semiconductor) - 2
| Fabricante | ON Semiconductor |
| Descripción | Power MOSFET 50 Amps, 30 Volts, Logic Level P−Channel TO−220 |
| Páginas / Página | 8 / 2 — MTP50P03HDLG. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. … |
| Formato / tamaño de archivo | PDF / 113 Kb |
| Idioma del documento | Inglés |
MTP50P03HDLG. ELECTRICAL CHARACTERISTICS. Characteristic. Symbol. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS
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MTP50P03HDLG ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Note 3) V(BR)DSS Vdc (VGS = 0 Vdc, ID = 250 mAdc) 30 − − Temperature Coefficient (Positive) − 26 − mV/°C Zero Gate Voltage Drain Current IDSS mAdc (VDS = 30 Vdc, VGS = 0 Vdc) − − 1.0 (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) − − 10 Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc
ON CHARACTERISTICS
(Note 1) Gate Threshold Voltage (Cpk ≥ 3.0) (Note 3) VGS(th) Vdc (VDS = VGS, ID = 250 mAdc) 1.0 1.5 2.0 Threshold Temperature Coefficient (Negative) − 4.0 − mV/°C Static Drain−to−Source On−Resistance (Cpk ≥ 3.0) (Note 3) RDS(on) W (VGS = 5.0 Vdc, ID = 25 Adc) − 0.020 0.025 Drain−to−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 50 Adc) − 0.83 1.5 (ID = 25 Adc, TJ = 125°C) − − 1.3 Forward Transconductance gFS mhos (VDS = 5.0 Vdc, ID = 25 Adc) 15 20 −
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 3500 4900 pF (VDS = 25 Vdc, VGS = 0 Vdc, Output Capacitance C f = 1.0 MHz) oss − 1550 2170 Transfer Capacitance Crss − 550 770
SWITCHING CHARACTERISTICS
(Note 2) Turn−On Delay Time td(on) − 22 30 ns Rise Time (V t DD = 15 Vdc, ID = 50 Adc, r − 340 466 V Turn−Off Delay Time GS = 5.0 Vdc, RG = 2.3 W) td(off) − 90 117 Fall Time tf − 218 300 Gate Charge QT − 74 100 nC (See Figure 8) (V Q DS = 24 Vdc, ID = 50 Adc, 1 − 13.6 − VGS = 5.0 Vdc) Q2 − 44.8 − Q3 − 35 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage V Vdc (I SD S =50 Adc, VGS = 0 Vdc) − 2.39 3.0 (IS = 50 Adc, VGS = 0 Vdc, TJ = 125°C) − 1.84 − Reverse Recovery Time trr − 106 − ns (See Figure 15) (I t S = 50 Adc, VGS = 0 Vdc, a − 58 − dIS/dt = 100 A/ms) tb − 48 − Reverse Recovery Stored Charge QRR − 0.246 − mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD nH (Measured from contact screw on tab to center of die) − 3.5 − (Measured from the drain lead 0.25″ from package to center of die) − 4.5 − Internal Source Inductance LS nH (Measured from the source lead 0.25″ from package to source bond pad) − 7.5 − 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. 3. Reflects typical values. Max limit − Typ Cpk = 3 x SIGMA
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MTP50P03HDLG ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Cpk ≥ 2.0) (Note 3) V(BR)DSS Vdc (VGS = 0 Vdc, ID = 250 mAdc) 30 − − Temperature Coefficient (Positive) − 26 − mV/°C Zero Gate Voltage Drain Current IDSS mAdc (VDS = 30 Vdc, VGS = 0 Vdc) − − 1.0 (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) − − 10 Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc) IGSS − − 100 nAdc
ON CHARACTERISTICS
(Note 1) Gate Threshold Voltage (Cpk ≥ 3.0) (Note 3) VGS(th) Vdc (VDS = VGS, ID = 250 mAdc) 1.0 1.5 2.0 Threshold Temperature Coefficient (Negative) − 4.0 − mV/°C Static Drain−to−Source On−Resistance (Cpk ≥ 3.0) (Note 3) RDS(on) W (VGS = 5.0 Vdc, ID = 25 Adc) − 0.020 0.025 Drain−to−Source On−Voltage (VGS = 10 Vdc) VDS(on) Vdc (ID = 50 Adc) − 0.83 1.5 (ID = 25 Adc, TJ = 125°C) − − 1.3 Forward Transconductance gFS mhos (VDS = 5.0 Vdc, ID = 25 Adc) 15 20 −
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss − 3500 4900 pF (VDS = 25 Vdc, VGS = 0 Vdc, Output Capacitance C f = 1.0 MHz) oss − 1550 2170 Transfer Capacitance Crss − 550 770
SWITCHING CHARACTERISTICS
(Note 2) Turn−On Delay Time td(on) − 22 30 ns Rise Time (V t DD = 15 Vdc, ID = 50 Adc, r − 340 466 V Turn−Off Delay Time GS = 5.0 Vdc, RG = 2.3 W) td(off) − 90 117 Fall Time tf − 218 300 Gate Charge QT − 74 100 nC (See Figure 8) (V Q DS = 24 Vdc, ID = 50 Adc, 1 − 13.6 − VGS = 5.0 Vdc) Q2 − 44.8 − Q3 − 35 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage V Vdc (I SD S =50 Adc, VGS = 0 Vdc) − 2.39 3.0 (IS = 50 Adc, VGS = 0 Vdc, TJ = 125°C) − 1.84 − Reverse Recovery Time trr − 106 − ns (See Figure 15) (I t S = 50 Adc, VGS = 0 Vdc, a − 58 − dIS/dt = 100 A/ms) tb − 48 − Reverse Recovery Stored Charge QRR − 0.246 − mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance LD nH (Measured from contact screw on tab to center of die) − 3.5 − (Measured from the drain lead 0.25″ from package to center of die) − 4.5 − Internal Source Inductance LS nH (Measured from the source lead 0.25″ from package to source bond pad) − 7.5 − 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 2. Switching characteristics are independent of operating junction temperature. 3. Reflects typical values. Max limit − Typ Cpk = 3 x SIGMA
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