Preliminary Datasheet IRL3502 (International Rectifier) - 3
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 8 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| Formato / tamaño de archivo | PDF / 84 Kb |
| Idioma del documento | Inglés |
Fig 1. Fig 2. Fig 3. Fig 4
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IRL3502 1000 1000 VGS VGS TOP 7.00V TOP 7.00V 5.00V 5.00V 4.50V 4.50V 3.50V 3.50V 3.00V 3.00V 2.70V 2.70V 2.50V 2.50V BOTTOM 2.25V BOTTOM 2.25V 100 100 2.25V 2.25V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 20µs PULSE WIDTH 20µs PULSE WIDTH T = 25 J °C T = 150 J °C 10 10 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) DS V , Drain-to-Source Voltage (V) DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 ID = 110A T = 25 C ° J 1.5 T = 150 C ° J 100 1.0 (Normalized) 0.5 I , Drain-to-Source Current (A) D V = 15V DS 20µs PULSE WIDTH DS(on) V = GS 4.5V 10 R , Drain-to-Source On Resistance 0.0 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 V , Gate-to-Source Voltage (V) ° GS T , Junction Temperature( C) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics 1000 2.0 ID = 110A T = 25 C ° J 1.5 T = 150 C ° J 100 1.0 (Normalized) 0.5 I , Drain-to-Source Current (A) D V = 15V DS 20µs PULSE WIDTH DS(on) V = GS 4.5V 10 R , Drain-to-Source On Resistance 0.0 2 3 4 5 6 -60 -40 -20 0 20 40 60 80 100 120 140 160 V , Gate-to-Source Voltage (V) ° GS T , Junction Temperature( C) J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature