Preliminary Datasheet IRL3502 (International Rectifier)
| Fabricante | International Rectifier |
| Descripción | HEXFET Power MOSFET |
| Páginas / Página | 8 / 1 — PRELIMINARY. Description. Absolute Maximum Ratings. Parameter. Max. … |
| Formato / tamaño de archivo | PDF / 84 Kb |
| Idioma del documento | Inglés |
PRELIMINARY. Description. Absolute Maximum Ratings. Parameter. Max. Units. Thermal Resistance. Typ
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PD 9.1698A IRL3502
PRELIMINARY
HEXFET® Power MOSFET l Advanced Process Technology D l Optimized for 4.5V-7.0V Gate Drive VDSS = 20V l Ideal for CPU Core DC-DC Converters l Fast Switching RDS(on) = 0.007Ω G ID = 110A
Description
S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0V 110 ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0V 67 A IDM Pulsed Drain Current 420 PD @TC = 25°C Power Dissipation 140 W Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 10 V VGSM Gate-to-Source Voltage 14 V (Start Up Transient, tp = 100µs) EAS Single Pulse Avalanche Energy 390 mJ IAR Avalanche Current 64 A EAR Repetitive Avalanche Energy 14 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.89 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 11/17/97
PRELIMINARY
HEXFET® Power MOSFET l Advanced Process Technology D l Optimized for 4.5V-7.0V Gate Drive VDSS = 20V l Ideal for CPU Core DC-DC Converters l Fast Switching RDS(on) = 0.007Ω G ID = 110A
Description
S These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220AB
Absolute Maximum Ratings Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 5.0V 110 ID @ TC = 100°C Continuous Drain Current, VGS @ 5.0V 67 A IDM Pulsed Drain Current 420 PD @TC = 25°C Power Dissipation 140 W Linear Derating Factor 1.1 W/°C VGS Gate-to-Source Voltage ± 10 V VGSM Gate-to-Source Voltage 14 V (Start Up Transient, tp = 100µs) EAS Single Pulse Avalanche Energy 390 mJ IAR Avalanche Current 64 A EAR Repetitive Avalanche Energy 14 mJ dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.89 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient ––– 62 11/17/97