Datasheet Si2334DS (Vishay) - 5
| Fabricante | Vishay |
| Descripción | N-Channel 30 V (D-S) MOSFET |
| Páginas / Página | 9 / 5 — Si2334DS. TYPICAL CHARACTERISTICS. Current Derating*. Power, … |
| Formato / tamaño de archivo | PDF / 190 Kb |
| Idioma del documento | Inglés |
Si2334DS. TYPICAL CHARACTERISTICS. Current Derating*. Power, Junction-to-Foot. Power, Junction-to-Ambient
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Si2334DS
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 6.0 4.5 3.0 - Drain Current (A) I D 1.5 0 0 25 50 75 100 125 150 T - Case Temperature (°C) C
Current Derating*
2.0 1.0 0.8 1.5 0.6 1.0 Power (W) Power (W) 0.4 0.5 0.2 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) C T - Ambient Temperature (°C) A
Power, Junction-to-Foot Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 66802 www.vishay.com S10-1533-Rev. A, 19-Jul-10 5
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 6.0 4.5 3.0 - Drain Current (A) I D 1.5 0 0 25 50 75 100 125 150 T - Case Temperature (°C) C
Current Derating*
2.0 1.0 0.8 1.5 0.6 1.0 Power (W) Power (W) 0.4 0.5 0.2 0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) C T - Ambient Temperature (°C) A
Power, Junction-to-Foot Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 66802 www.vishay.com S10-1533-Rev. A, 19-Jul-10 5