Datasheet Si2334DS (Vishay)
| Fabricante | Vishay |
| Descripción | N-Channel 30 V (D-S) MOSFET |
| Páginas / Página | 9 / 1 — Si2334DS. N-Channel 30 V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. … |
| Formato / tamaño de archivo | PDF / 190 Kb |
| Idioma del documento | Inglés |
Si2334DS. N-Channel 30 V (D-S) MOSFET. FEATURES. PRODUCT SUMMARY. Halogen-free According to IEC 61249-2-21. VDS (V). RDS(on) (
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Si2334DS
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition
0.044 at VGS = 4.5 V 4.9 • TrenchFET® Power MOSFET 30 3.7 nC 0.050 at VGS = 2.5 V 4.6 • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter for Portable Devices
TO-236
• Load Switch (SOT-23) D G 1 3 D S 2 G Top View Si2334DS (PS)* * Marking Code S
Ordering Information:
Si2334DS-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 8 TC = 25 °C 4.9 TC = 70 °C 3.9 Continuous Drain Current (TJ = 150 °C) ID TA = 25 °C 4.2b, c T A A = 70 °C 3.4b, c Pulsed Drain Current IDM 10 TC = 25 °C 1.4 Continuous Source-Drain Diode Current IS TA = 25 °C 1.1b, c TC = 25 °C 1.7 TC = 70 °C 1.1 Maximum Power Dissipation PD W TA = 25 °C 1.3b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t 5 s RthJA 80 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. Document Number: 66802 www.vishay.com S10-1533-Rev. A, 19-Jul-10 1
Vishay Siliconix
N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition
0.044 at VGS = 4.5 V 4.9 • TrenchFET® Power MOSFET 30 3.7 nC 0.050 at VGS = 2.5 V 4.6 • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converter for Portable Devices
TO-236
• Load Switch (SOT-23) D G 1 3 D S 2 G Top View Si2334DS (PS)* * Marking Code S
Ordering Information:
Si2334DS-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted
Parameter Symbol Limit Unit
Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 8 TC = 25 °C 4.9 TC = 70 °C 3.9 Continuous Drain Current (TJ = 150 °C) ID TA = 25 °C 4.2b, c T A A = 70 °C 3.4b, c Pulsed Drain Current IDM 10 TC = 25 °C 1.4 Continuous Source-Drain Diode Current IS TA = 25 °C 1.1b, c TC = 25 °C 1.7 TC = 70 °C 1.1 Maximum Power Dissipation PD W TA = 25 °C 1.3b, c TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C
THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambientb, d t 5 s RthJA 80 100 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 60 75 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 166 °C/W. Document Number: 66802 www.vishay.com S10-1533-Rev. A, 19-Jul-10 1