Datasheet BAR42, BAR43 (STMicroelectronics)
| Fabricante | STMicroelectronics |
| Descripción | Small Signal Schottky Diode |
| Páginas / Página | 7 / 1 — BAR42. BAR43. Datasheet. production data. Description. Table 1. Device … |
| Formato / tamaño de archivo | PDF / 122 Kb |
| Idioma del documento | Inglés |
BAR42. BAR43. Datasheet. production data. Description. Table 1. Device summary. Symbol. Value. SOT23-3L. Features
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BAR42 BAR43
Small signal Schottky diode
Datasheet
-
production data Description
$ . $ General purpose metal to silicon diodes featuring 1F . $ very low turn-on voltage and fast switching. $ . .
Table 1. Device summary
%$5),/0 %$5$),/0 %$5),/0
Symbol Value
$ $ IF(AV) 0.1 A . $ . VRRM 30 V $ . $ . Tj 150 °C $ $ $ . VF (max) 0.33 and 0.40 V %$5&),/0 %$56),/0
SOT23-3L Features
• Very small conduction losses • Negligible switching losses • Low forward voltage drop • Surface mount device July 2017 DocID3288 Rev 5 1/7 This is information on a product in full production. www.st.com Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameter Table 4. Static electrical characteristics Table 5. Dynamic characteristics (Tj = 25 °C) Figure 1. Forward voltage drop versus forward current (typical values, low level) Figure 2. Forward voltage drop versus forward current (typical values, high level) Figure 3. Reverse leakage current versus reverse voltage applied (typical values) Figure 4. Reverse leakage current versus junction temperature Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 7. Thermal resistance junction to ambient versus copper surface under each lead 2 Package information Table 6. SOT23-3L dimensions Figure 8. Footprint (dimensions in mm) 3 Ordering information Table 7. Ordering information 4 Revision history Table 8. Document revision history
Small signal Schottky diode
Datasheet
-
production data Description
$ . $ General purpose metal to silicon diodes featuring 1F . $ very low turn-on voltage and fast switching. $ . .
Table 1. Device summary
%$5),/0 %$5$),/0 %$5),/0
Symbol Value
$ $ IF(AV) 0.1 A . $ . VRRM 30 V $ . $ . Tj 150 °C $ $ $ . VF (max) 0.33 and 0.40 V %$5&),/0 %$56),/0
SOT23-3L Features
• Very small conduction losses • Negligible switching losses • Low forward voltage drop • Surface mount device July 2017 DocID3288 Rev 5 1/7 This is information on a product in full production. www.st.com Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values) Table 3. Thermal parameter Table 4. Static electrical characteristics Table 5. Dynamic characteristics (Tj = 25 °C) Figure 1. Forward voltage drop versus forward current (typical values, low level) Figure 2. Forward voltage drop versus forward current (typical values, high level) Figure 3. Reverse leakage current versus reverse voltage applied (typical values) Figure 4. Reverse leakage current versus junction temperature Figure 5. Junction capacitance versus reverse voltage applied (typical values) Figure 6. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 7. Thermal resistance junction to ambient versus copper surface under each lead 2 Package information Table 6. SOT23-3L dimensions Figure 8. Footprint (dimensions in mm) 3 Ordering information Table 7. Ordering information 4 Revision history Table 8. Document revision history