Datasheet IR2153 (Infineon)

Data Sheet No. PD60062 revP (NOTE:For new designs, we recommend IR’s new product IRS2153D) IR2153(D)(S) &(PbF) SELF-OSCILLATING HALF-BRIDGE DRIVER Features Product Summary
• Integrated 600V half-bridge gate driver • 15.6V zener clamp on Vcc VOFFSET 600V max. • True micropower start up • Tighter initial deadtime control Duty Cycle 50% • Low temperature coefficient deadtime • T Shutdown feature (1/6th Vcc) on C r/Tp 80/40ns T pin • Increased undervoltage lockout Hysteresis (1V) • V Lower power level-shifting circuit clamp 15.6V • Constant LO, HO pulse widths at startup • Deadtime (typ.) 1.2 µs Lower di/dt gate driver for better noise immunity • Low side output in phase with RT • Internal 50nsec (typ.) bootstrap diode (IR2153D)
Packages
• Excellent latch immunity on all inputs and outputs • ESD protection on all leads • Also available LEAD-FREE
Description
The IR2153D(S) are an improved version of the 8 Lead PDIP 8 Lead SOIC popular IR2155 and IR2151 gate driver ICs, and incor- porates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. The IR2153 provides more functionality and is easier to use than previous ICs. A shutdown feature has been designed into the CT pin, so that both gate driver outputs can be disabled using a low voltage control signal. In addition, the gate driver output pulse widths are the same once the rising undervoltage lockout threshold on VCC has been reached, resulting in a more stable profile of frequency vs time at startup. Noise immunity has been improved significantly, both by lowering the peak di/dt of the gate drivers, and by increasing the undervoltage lockout hysteresis to 1V. Finally, special attention has been payed to maximizing the latch immunity of the device, and providing comprehensive ESD protection on all pins.
Typical Connections IR2153(S) IR2153D
600V 600V MAX MAX VCC VB VCC VB HO HO RT VS RT VS CT LO CT LO Shutdown COM Shutdown COM www.irf.com 1