Datasheet H11F1M, H11F2M, H11F3M (ON Semiconductor) - 3
| Fabricante | ON Semiconductor |
| Descripción | Photo FET Optocouplers |
| Páginas / Página | 10 / 3 — H11F1M, H11F2M, H11F3M. ELECTRICAL CHARACTERISTICS. INDIVIDUAL COMPONENT … |
| Formato / tamaño de archivo | PDF / 341 Kb |
| Idioma del documento | Inglés |
H11F1M, H11F2M, H11F3M. ELECTRICAL CHARACTERISTICS. INDIVIDUAL COMPONENT CHARACTERISTICS. Symbol. Parameter. Test Conditions. Min
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H11F1M, H11F2M, H11F3M ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameter Test Conditions Min Typ* Max Unit EMITTER
VF Input Forward Voltage IF = 16 mA − 1.3 1.75 V IR Reverse Leakage Current VR = 5 V − − 10 mA CJ Capacitance V = 0 V, f = 1.0 MHz − 50 − pF
OUTPUT DETECTOR
BV4−6 Breakdown Voltage H11F1M, I4−6 = 10 mA, IF = 0 30 − − V Either Polarity H11F2M H11F3M 15 − − I4−6 Off−State Dark Current V4−6 = 15 V, IF = 0 − − 50 nA V4−6 = 15 V, IF = 0, − − 50 mA TA = 100°C R4−6 Off−State Resistance V4−6 = 15 V, IF = 0 300 − − MW C4−6 Capacitance V4−6 = 15 V, IF = 0, − − 15 pF f = 1 MHz
TRANSFER CHARACTERISTICS Symbol Characteristics Test Conditions Min Typ* Max Unit DC CHARACTERISTICS
R4−6 On−State Resistance H11F1M IF = 16 mA, I4−6 = 100 mA − − 200 W H11F2M − − 330 H11F3M − − 470 R6−4 On−State Resistance H11F1M IF = 16 mA, I6−4 = 100 mA − − 200 W H11F2M − − 330 H11F3M − − 470 Resistance, Non−Linearity and Assymetry IF = 16 mA, I4−6 = 25 mA RMS, − 2 − % f = 1 kHz
AC CHARACTERISTICS
ton Turn−On Time RL = 50 W, IF = 16 mA, − − 45 ms V4−6 = 5 V toff Turn−Off Time RL = 50 W, IF = 16 mA, − − 45 ms V4−6 = 5 V
ISOLATION CHARACTERISTICS Symbol Characteristics Test Conditions Min Typ* Max Unit
VISO Input−Output Isolation Voltage t = 1 Minute 4170 − − VACRMS RISO Isolation Resistance VI−O = 500 VDC 1011 − − W CISO Isolation Capacitance f = 1 MHz − 0.2 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *All Typical values at TA= 25°C.
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(TA = 25°C unless otherwise noted)
INDIVIDUAL COMPONENT CHARACTERISTICS Symbol Parameter Test Conditions Min Typ* Max Unit EMITTER
VF Input Forward Voltage IF = 16 mA − 1.3 1.75 V IR Reverse Leakage Current VR = 5 V − − 10 mA CJ Capacitance V = 0 V, f = 1.0 MHz − 50 − pF
OUTPUT DETECTOR
BV4−6 Breakdown Voltage H11F1M, I4−6 = 10 mA, IF = 0 30 − − V Either Polarity H11F2M H11F3M 15 − − I4−6 Off−State Dark Current V4−6 = 15 V, IF = 0 − − 50 nA V4−6 = 15 V, IF = 0, − − 50 mA TA = 100°C R4−6 Off−State Resistance V4−6 = 15 V, IF = 0 300 − − MW C4−6 Capacitance V4−6 = 15 V, IF = 0, − − 15 pF f = 1 MHz
TRANSFER CHARACTERISTICS Symbol Characteristics Test Conditions Min Typ* Max Unit DC CHARACTERISTICS
R4−6 On−State Resistance H11F1M IF = 16 mA, I4−6 = 100 mA − − 200 W H11F2M − − 330 H11F3M − − 470 R6−4 On−State Resistance H11F1M IF = 16 mA, I6−4 = 100 mA − − 200 W H11F2M − − 330 H11F3M − − 470 Resistance, Non−Linearity and Assymetry IF = 16 mA, I4−6 = 25 mA RMS, − 2 − % f = 1 kHz
AC CHARACTERISTICS
ton Turn−On Time RL = 50 W, IF = 16 mA, − − 45 ms V4−6 = 5 V toff Turn−Off Time RL = 50 W, IF = 16 mA, − − 45 ms V4−6 = 5 V
ISOLATION CHARACTERISTICS Symbol Characteristics Test Conditions Min Typ* Max Unit
VISO Input−Output Isolation Voltage t = 1 Minute 4170 − − VACRMS RISO Isolation Resistance VI−O = 500 VDC 1011 − − W CISO Isolation Capacitance f = 1 MHz − 0.2 − pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *All Typical values at TA= 25°C.
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