Datasheet H11F1M, H11F2M, H11F3M (ON Semiconductor) - 2

FabricanteON Semiconductor
DescripciónPhoto FET Optocouplers
Páginas / Página10 / 2 — H11F1M, H11F2M, H11F3M. SAFETY AND INSULATION RATINGS. Parameter. …
Formato / tamaño de archivoPDF / 341 Kb
Idioma del documentoInglés

H11F1M, H11F2M, H11F3M. SAFETY AND INSULATION RATINGS. Parameter. Characteristics. Symbol. Value. Unit. ABSOLUTE MAXIMUM RATINGS

H11F1M, H11F2M, H11F3M SAFETY AND INSULATION RATINGS Parameter Characteristics Symbol Value Unit ABSOLUTE MAXIMUM RATINGS

Línea de modelo para esta hoja de datos

Versión de texto del documento

link to page 2 link to page 2 link to page 2 link to page 2
H11F1M, H11F2M, H11F3M SAFETY AND INSULATION RATINGS
(As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1 < 150 Vrms I−IV < 300 Vrms I−IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index 175
Symbol Parameter Value Unit
VPR Input to Output Test Voltage, Method A, VIORM x 1.6 = VPR, 1360 Vpeak Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC Input to Output Test Voltage, Method B, VIORM x 1.875 = VPR, 1594 Vpeak 100% Production Test with tm = 1 s, Partial Discharge < 5 pC VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over Voltage 6,000 Vpeak External Creepage ≥7 mm External Clearance ≥7 mm External Clearance (for Option TV, 0.4″ Lead Spacing) ≥10 mm DTI Distance Through Insulation (Insulation Thickness) ≥0.5 mm TS Case Temperature (Note 1) 175 °C IS,INPUT Input Current (Note 1) 350 mA PS,OUTPUT Output Power (Note 1) 800 mW RIO Insulation Resistance at Ts, VIO = 500 V (Note 1) >109 W 1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified)
Symbol Parameter Value Unit TOTAL DEVICE
TSTG Storage Temperature −40 to +125 °C TOPR Operating Temperature −40 to +100 °C TSOL Lead Solder Temperature 260 for 10 seconds °C
EMITTER
IF Continuous Forward Current 60 mA VR Reverse Voltage 5 V IF(pk) Forward Current – Peak (10 ms Pulse, 1% Duty Cycle) 1 A PD LED Power Dissipation Ambient 25°C Ambient 100 mW Derate Linearly from 25°C 1.33 mW/°C
DETECTOR
PD Detector Power Dissipation at 25°C 300 mW Derate Linearly from 25°C 4.0 mW/°C BV4−6 Breakdown Voltage (Either Polarity) H11F1M, H11F2M ±30 V H11F3M ±15 V I4−6 Continuous Detector Current (Either Polarity) ±100 mA Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com 2