Datasheet FDN340P (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | MOSFET – Single, P-Channel, POWERTRENCH, Logic Level |
| Páginas / Página | 6 / 4 — FDN340P. TYPICAL CHARACTERISTICS. oltage (V). Capacitance (pF). , Drain … |
| Formato / tamaño de archivo | PDF / 309 Kb |
| Idioma del documento | Inglés |
FDN340P. TYPICAL CHARACTERISTICS. oltage (V). Capacitance (pF). , Drain to Source V. −V DS. g,Gate Charge (nC)
Línea de modelo para esta hoja de datos
Versión de texto del documento
link to page 2
FDN340P TYPICAL CHARACTERISTICS
(Continued) 5 1000 ID = −3.5 A VDS = −5 V f = 1 MHz C V ISS GS = 0 V 4 −10 V 800
oltage (V)
−15 V 3 600 2 400
Capacitance (pF)
COSS
, Drain to Source V
1 200
−V DS
CRSS 0 0 0 1 2 3 4 5 6 7 8 9 0 5 10 15 20
Q −V g,Gate Charge (nC) DS, Drain to Source Voltage (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
100 50 Single Pulse R R DS(ON) LIMIT 1 s 40 θJA = 270°C/W 10 TA = 25°C 1 ms 10 ms 30 1 100 ms
Power (W)
20
, Drain Current (A)
1 s
−I D
0.1 VGS = −10 V Single Pulse 10 DS RθJA = 270°C/W T 0.01 A = 25°C 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100
−VDS, Drain−Source Voltage (V) Single Pulse Time (SEC) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation
1 0.5 D = 0.5
ransient
0.2 0.2 RqJA(t) = r(t) * RqJA 0.1 0.1 RqJA = 270°C/W 0.05 0.05 0.02 P(pk) 0.02 0.01 t1 0.01
Thermal Resistance
Single Pulse t 0.005 2 TJ − TA = P * RqJA (t)
r(t), Normalized Effective T
0.002 Duty Cycle, D = t1 / t2 0.0010.0001 0.001 0.01 0.1 1 10 100 300
t1, Time (sec) Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
www.onsemi.com 4
FDN340P TYPICAL CHARACTERISTICS
(Continued) 5 1000 ID = −3.5 A VDS = −5 V f = 1 MHz C V ISS GS = 0 V 4 −10 V 800
oltage (V)
−15 V 3 600 2 400
Capacitance (pF)
COSS
, Drain to Source V
1 200
−V DS
CRSS 0 0 0 1 2 3 4 5 6 7 8 9 0 5 10 15 20
Q −V g,Gate Charge (nC) DS, Drain to Source Voltage (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
100 50 Single Pulse R R DS(ON) LIMIT 1 s 40 θJA = 270°C/W 10 TA = 25°C 1 ms 10 ms 30 1 100 ms
Power (W)
20
, Drain Current (A)
1 s
−I D
0.1 VGS = −10 V Single Pulse 10 DS RθJA = 270°C/W T 0.01 A = 25°C 0 0.1 1 10 100 0.001 0.01 0.1 1 10 100
−VDS, Drain−Source Voltage (V) Single Pulse Time (SEC) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation
1 0.5 D = 0.5
ransient
0.2 0.2 RqJA(t) = r(t) * RqJA 0.1 0.1 RqJA = 270°C/W 0.05 0.05 0.02 P(pk) 0.02 0.01 t1 0.01
Thermal Resistance
Single Pulse t 0.005 2 TJ − TA = P * RqJA (t)
r(t), Normalized Effective T
0.002 Duty Cycle, D = t1 / t2 0.0010.0001 0.001 0.01 0.1 1 10 100 300
t1, Time (sec) Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
www.onsemi.com 4