Datasheet FDN340P (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | MOSFET – Single, P-Channel, POWERTRENCH, Logic Level |
| Páginas / Página | 6 / 1 — DATA SHEET. www.onsemi.com. SOT−23. CASE 527AG. General Description. … |
| Formato / tamaño de archivo | PDF / 309 Kb |
| Idioma del documento | Inglés |
DATA SHEET. www.onsemi.com. SOT−23. CASE 527AG. General Description. onsemi. MARKING DIAGRAM. Features. ORDERING INFORMATION
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DATA SHEET www.onsemi.com
MOSFET – Single, P-Channel, POWERTRENCH), Logic Level
SOT−23 CASE 527AG
FDN340P D
General Description
This P−Channel Logic Level MOSFET is produced using
onsemi
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. G S These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and dc−dc conversion.
MARKING DIAGRAM Features
Drain • −2 A, 20 V 3 ♦ RDS(ON) = 70 mW @ VGS = −4.5 V 340M ♦ RDS(ON) = 110 mW @ VGS = −2.5 V • Low Gate Charge (7.2 nC Typical) 1 2 • High Performance Trench Technology for Extremely Low RDS(ON) Gate Source • High Power Version of Industry Standard SOT−23 Package. Identical M = Date Code Pin−Out to SOT−23 with 30% Higher Power Handling Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
ORDERING INFORMATION
Compliant See detailed ordering and shipping information on page 2 of this data sheet.
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit
VDSS Drain−Source Voltage −20 V VGSS Gate−Source Voltage ±8 V ID Drain Current A Continuous (Note 1a) −2 Pulsed −10 PD Power Dissipation for Single Operation W (Note 1a) 0.5 (Note 1b) 0.46 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit
RθJA Thermal Resistance, Junction−to−Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction−to−Case (Note 1) 75 °C/W © Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
May, 2022 − Rev. 8 FDN340P/D
DATA SHEET www.onsemi.com
MOSFET – Single, P-Channel, POWERTRENCH), Logic Level
SOT−23 CASE 527AG
FDN340P D
General Description
This P−Channel Logic Level MOSFET is produced using
onsemi
advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. G S These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and dc−dc conversion.
MARKING DIAGRAM Features
Drain • −2 A, 20 V 3 ♦ RDS(ON) = 70 mW @ VGS = −4.5 V 340M ♦ RDS(ON) = 110 mW @ VGS = −2.5 V • Low Gate Charge (7.2 nC Typical) 1 2 • High Performance Trench Technology for Extremely Low RDS(ON) Gate Source • High Power Version of Industry Standard SOT−23 Package. Identical M = Date Code Pin−Out to SOT−23 with 30% Higher Power Handling Capability • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
ORDERING INFORMATION
Compliant See detailed ordering and shipping information on page 2 of this data sheet.
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Symbol Parameter Ratings Unit
VDSS Drain−Source Voltage −20 V VGSS Gate−Source Voltage ±8 V ID Drain Current A Continuous (Note 1a) −2 Pulsed −10 PD Power Dissipation for Single Operation W (Note 1a) 0.5 (Note 1b) 0.46 TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 _C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit
RθJA Thermal Resistance, Junction−to−Ambient (Note 1a) 250 °C/W RθJC Thermal Resistance, Junction−to−Case (Note 1) 75 °C/W © Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
May, 2022 − Rev. 8 FDN340P/D