Datasheet FDC5614P (Fairchild) - 2

FabricanteFairchild
DescripciónP-Channel, POWERTRENCH), Logic 60 V
Páginas / Página7 / 2 — FDC5614P. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test Conditions. …
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FDC5614P. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit. OFF CHARACTERISTICS. ON CHARACTERISTICS

FDC5614P ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS ON CHARACTERISTICS

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FDC5614P ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = −250 A −60 − − V BV Breakdown Voltage Temperature I − −49 − mV/°C DSS D = −250 μA, T Coefficient Referenced to 25°C J IDSS Zero Gate Voltage Drain Current VDS = −48 V, VGS = 0 V − − −1 A IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V − − 100 nA IGSSR Gate–Body Leakage, Reverse VGS = −20 V, VDS = 0 V − − −100
ON CHARACTERISTICS
(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = −250 A −1 −1.6 −3 V V Gate Threshold Voltage Temperature I − 4 − mV/°C GS(th) D = −250 A, Coefficient Referenced to 25°C TJ RDS(on) Static Drain–Source On–Resistance VGS = −10 V, ID = −3 A − 82 105 m VGS = −4.5 V, ID = −2.7 A − 105 135 VGS = −10 V, ID = −3 A, − 130 190 TJ = 125°C ID(on) On–State Drain Current VGS = −10 V, VDS = −5 V −20 − − A gFS Forward Transconductance VDS = −5 V, ID = −3 A − 8 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = −30 V, VGS = 0 V, − 759 − pF f = 1.0 MHz Coss Output Capacitance − 90 − Crss Reverse Transfer Capacitance − 39 −
SWITCHING CHARACTERISTICS
(Note 2) td(on) Turn–On Delay Time VDD = −30 V, ID = −1 A, − 7 14 ns VGS = −10 V, RGEN = 6 tr Turn–On Rise Time − 10 20 td(off) Turn–Off Delay Time − 19 34 tf Turn–Off Fall Time − 12 22 Qg Total Gate Charge VDS = −30 V, ID = −3.0 A, − 15 24 nC VGS = −10 V Qgs Gate–Source Charge − 2.5 − Qgd Gate–Drain Charge − 3.0 −
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuos–Source Diode Forward Current − − −1.3 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = −1.3 A (Note 2) − −0.8 −1.2 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user’s board design. a) 78°C/W when mounted on a 1in2 pad of 2oz copper on FR−4 board. b) 156°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
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