link to page 2 FDC5614PTYPICAL CHARACTERISTICS (continued) 10 I 1200 D = −3.0 A VDS = −10 V f = 1 Mhz VGS = 0 V 8 1000 CISS oltage (V) −20 V 800 6 −30 V 600 4 −Source VCapacitance (pF) 400 , Gate COSS 2 V GS 200 CRSS 0 0 0 4 8 12 16 0 10 20 30 40 50 60 Qg, Gate Charge (nC)VDS, Drain to Source Voltage (V)Figure 7. Gate Charge CharacteristicsFigure 8. Capacitance Characteristics 30 1000 This Area is Limited 10 by RDS(on) Single Pulse RJA = 156°C/W 100 TA = 25°C 100 s 1 10 1 ms ransient Power (W) 10 ms , Drain Current (A) Single Pulse I D 0.1 TJ = Max Rated 100 ms , Peak T 1 RJA = 156°C/W TA = 25°C 1 s P (pk) 0.01 DC 0.1 0.01 0.1 1 10 100 300 10−4 10−3 10−2 10−1 1 10 100 1000 VDS, Drain to Source Voltage (V)t, Pulse Width (s)Figure 9. Maximum Safe Opening AreaFigure 11. Single Pulse Maximum PowerDissipation 2 Duty Cycle−Descending Order 1 D = 0.5 0.2 0.1 0.1 0.05 PDM 0.02 t1 0.01 t2 0.01 RJA(t)= r(t) x RJA R Single Pulse JA = 156 °C/W , Normalized Thermal Impedance Peak TJ = PDM x ZJA(t) + TA Duty Cycle, D = t1 / t2 Z qJA 0.00110−4 10−3 10−2 10−1 1 10 100 1000 t, Regular Pulse Duration (s)Figure 10. Transient Thermal Response Curve NOTE: Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com4