Datasheet STB75NF75, STP75NF75, STP75NF75FP (STMicroelectronics) - 5
| Fabricante | STMicroelectronics |
| Descripción | N-channel 75V -0.0095Ω -80A -TO-220 -TO-220FP -D2PAK STripFET II Power MOSFET |
| Páginas / Página | 16 / 5 — STB75NF75 - STP75NF75 - STP75NF75FP. Electrical characteristics. Table 5. … |
| Formato / tamaño de archivo | PDF / 428 Kb |
| Idioma del documento | Inglés |
STB75NF75 - STP75NF75 - STP75NF75FP. Electrical characteristics. Table 5. Switching times. Symbol. Parameter. Test conditions. Min. Typ
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STB75NF75 - STP75NF75 - STP75NF75FP Electrical characteristics Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time 25 ns V t DD= 37.5V, ID= 45A, r Rise time 100 ns R t G=4.7Ω, VGS=10V d(off) Turn-off delay time 66 ns Figure 15 on page 9 t Fall time 30 ns f
Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit
ISD Source-drain current 80 A I (1) SDM Source-drain current (pulsed) 320 A V (2) SD Forward on voltage ISD = 80A, VGS = 0 1.5 V I t SD = 80A, rr Reverse recovery time 132 ns di/dt = 100A/µs, Qrr Reverse recovery charge 660 nC VDD = 25V, TJ = 150°C I Reverse recovery current 10 A RRM Figure 17 on page 9 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/16 Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data 5 Packaging mechanical data 6 Revision history
STB75NF75 - STP75NF75 - STP75NF75FP Electrical characteristics Table 5. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time 25 ns V t DD= 37.5V, ID= 45A, r Rise time 100 ns R t G=4.7Ω, VGS=10V d(off) Turn-off delay time 66 ns Figure 15 on page 9 t Fall time 30 ns f
Table 6. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit
ISD Source-drain current 80 A I (1) SDM Source-drain current (pulsed) 320 A V (2) SD Forward on voltage ISD = 80A, VGS = 0 1.5 V I t SD = 80A, rr Reverse recovery time 132 ns di/dt = 100A/µs, Qrr Reverse recovery charge 660 nC VDD = 25V, TJ = 150°C I Reverse recovery current 10 A RRM Figure 17 on page 9 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/16 Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data 5 Packaging mechanical data 6 Revision history