Datasheet STB75NF75, STP75NF75, STP75NF75FP (STMicroelectronics) - 4

Electrical characteristics STB75NF75 - STP75NF75 - STP75NF75FP 2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit
Drain-source breakdown V(BR)DSS I voltage D = 250µA, VGS= 0 75 V Zero gate voltage drain VDS = Max rating, 1 µA IDSS current (VGS = 0) VDS = Max rating @125°C 10 µA Gate body leakage current IGSS V (V GS = ±20V ±100 nA DS = 0) VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA 2 3 4 V Static drain-source on RDS(on) V resistance GS= 10V, ID= 40A 0.0095 0.011 Ω
Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit
g (1) fs Forward transconductance VDS = 15V, ID = 40A 20 S Ciss Input capacitance 3700 pF C Output capacitance V oss DS =25V, f = 1 MHz, 730 pF V C Reverse transfer GS = 0 rss 240 pF capacitance Qg Total gate charge 117 V 160 nC DD = 60V, ID = 80A Qgs Gate-source charge 27 nC VGS =10V Q Gate-drain charge 47 nC gd 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 4/16 Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data 5 Packaging mechanical data 6 Revision history